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參數(shù)資料
| 型號(hào)： | M59DR008FZB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 8兆位512KB的x16插槽，雙行，第低壓閃存 |
| 文件頁(yè)數(shù)： | 1/37頁(yè) |
| 文件大小： | 267K |
| 代理商： | M59DR008FZB |
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PRODUCT PREVIEW
October 1999
This is preliminary information on a new product now in development. Details are subject to change without notice.
M59DR008E
M59DR008F
8 Mbit (512Kb x16, Dual Bank, Page) Low Voltage Flash Memory
I
SUPPLY VOLTAGE
– V
DD
= V
DDQ
= 1.65V to 2.2V: for Program,
Erase and Read
– V
PP
= 12V: optional Supply Voltage for fast
Program and Erase
I
ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 words
– Page Access: 35ns
– Random Access: 100ns
I
PROGRAMMING TIME
– 10μs by Word typical
– Double Word Programming Option
I
MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit - 4 Mbit
– Parameter Blocks (Top or Bottom location)
– Main Blocks
I
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
I
BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power Up
– Any combination of Blocks can be protected
– WP for Block Locking
I
COMMON FLASH INTERFACE (CFI)
I
64 bit SECURITY CODE
I
ERASE SUSPEND and RESUME MODES
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M59DR008E: A2h
– Device Code, M59DR008F: A3h
BGA
TSOP48 (N)
12 x 20mm
FBGA48 (ZB)
8 x 6 solder balls
Figure 1. Logic Diagram
AI03212
19
A0-A18
W
DQ0-DQ15
VDD
M59DR008E
M59DR008F
E
VSS
16
G
RP
WP
VDDQVPP
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| M59DR008EN | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
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| M59DR008F100N1T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008F100N6T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR016 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C120ZA6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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