參數(shù)資料
型號(hào)： M59DR008
廠商： 意法半導(dǎo)體
英文描述： 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
中文描述： 8兆位512KB的x16插槽，雙行，第低壓閃存
文件頁數(shù)： 16/37頁
文件大?。?/td> 267K
代理商： M59DR008
M59DR008E, M59DR008F
16/37
Table 19. Status Register Bits
(1)
Note: 1. Logic level ’1’ is High, ’0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations.
2. In case of double word program DQ7 refers to the last word input.
DQ
Name
Logic Level
Definition
Note
7
Data
Polling
’1’
Erase Complete or erase block
in Erase Suspend.
Indicates the P/E.C. status, check
during Program or Erase, and on
completion before checking bits DQ5
for Program or Erase Success.
’0’
Erase On-going
DQ
Program Complete or data of
non erase block during Erase
Suspend.
DQ
Program On-going
(2)
6
Toggle Bit
’-1-0-1-0-1-0-1-’
Erase or Program On-going
Successive reads output
complementary data on DQ6 while
Programming or Erase operations are
on-going. DQ6 remains at constant
level when P/E.C. operations are
completed or Erase Suspend is
acknowledged.
DQ
Program Complete
’-1-1-1-1-1-1-1-’
Erase Complete or Erase
Suspend on currently addressed
block
5
Error Bit
’1’
Program or Erase Error
This bit is set to ’1’ in the case of
Programming or Erase failure.
’0’
Program or Erase On-going
4
Reserved
3
Erase Time
Bit
’1’
Erase Timeout Period Expired
P/E.C. Erase operation has started.
Only possible command entry is Erase
Suspend (ES)
’0’
Erase Timeout Period On-going
An additional block to be erased in
parallel can be entered to the P/E.C:
2
Toggle Bit
’-1-0-1-0-1-0-1-’
Erase Suspend read in the
Erase Suspended Block.
Erase Error due to the currently
addressed block (when DQ5 =
’1’).
Indicates the erase status and allows
to identify the erased block.
1
Program on-going or Erase
Complete.
DQ
Erase Suspend read on non
Erase Suspend block.
1
Reserved
0
Reserved
相關(guān)PDF資料
PDF描述
M59DR008E100N1T Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
M59DR008E100N6T Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
M59DR008E100ZB1T 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100ZB6T 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M59DR008E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100ZB1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100ZB6T 功能描述:閃存 8M (512Kx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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