- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359084 > M59DR008 (意法半導(dǎo)體) 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M59DR008 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 8兆位512KB的x16插槽，雙行，第低壓閃存 |
| 文件頁數(shù)： | 12/37頁 |
| 文件大?。?/td> | 267K |
| 代理商： | M59DR008 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當(dāng)前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁
M59DR008E, M59DR008F
12/37
Table 14B. Instructions
(1,2)
Note: 1. Commands not interpreted in this table will default to read array mode.
2. For Coded cycles address inputs A11-A20 are don’t care.
3. X = Don’t Care.
4. The first cycles of the RD or AS instructions are followed by read operations. Any number of read cycles can occur after the com-
mand cycles.
5. During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased.
6. Program Address 1 and Program Address 2 must be consecutive addresses differing only for address bit A0.
7. High voltage on V
PP
(11.4V to 12.6V) is required for the proper execution of the Double Word Program instruction.
Mne.
Instr.
Cyc.
1st Cyc.
2nd Cyc.
3rd Cyc.
4th Cyc.
5th Cyc.
6th Cyc.
BL
Block Lock
4
Addr.
555h
2AAh
555h
Block
Address
Data
AAh
55h
60h
2Fh
BE
Block Erase
6+
Addr.
555h
2AAh
555h
555h
2AAh
Block
Address
Data
AAh
55h
80h
AAh
55h
30h
BKE
Bank Erase
6
Addr.
555h
2AAh
555h
555h
2AAh
Bank
Address
Data
AAh
55h
80h
AAh
55h
10h
ES
Erase Suspend
1
Addr.
(3)
X
Read until Toggle stops, then read all the data needed
from any Blocks not being erased then Resume Erase.
Data
B0h
ER
Erase Resume
1
Addr.
Bank
Address
Read Data Polling or Toggle Bits until Erase completes or
Erase is suspended another time
Data
30h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR008E100N1T | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
| M59DR008E100N6T | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
| M59DR008E100ZB1T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E100ZB6T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR008E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E100N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E100ZB6T | 功能描述:閃存 8M (512Kx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。