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參數(shù)資料
| 型號： | M59DR016C100ZB6T |
| 廠商： | 意法半導體 |
| 英文描述： | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| 中文描述： | 16兆1兆x16插槽，雙行，頁1.8V電源閃存 |
| 文件頁數(shù)： | 17/37頁 |
| 文件大?。?/td> | 240K |
| 代理商： | M59DR016C100ZB6T |
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M59DR016C, M59DR016D
Table 20. CFI Query System Interface Information
Offset
Data
Description
1Bh
0017h
V
DD
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1Ch
0022h
V
DD
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1Dh
0000h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
Note: This value must be 0000h if no V
PP
pin is present
1Eh
00C0h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
Note: This value must be 0000h if no V
PP
pin is present
1Fh
0004h
Typical timeout per single byte/word program (multi-byte program count = 1), 2
n
μs
(if supported; 0000h = not supported)
20h
0000h
Typical timeout for maximum-size multi-byte program or page write, 2
n
μs
(if supported; 0000h = not supported)
21h
000Ah
Typical timeout per individual block erase, 2
n
ms
(if supported; 0000h = not supported)
22h
0000h
Typical timeout for full chip erase, 2
n
ms
(if supported; 0000h = not supported)
23h
0004h
Maximum timeout for byte/word program, 2
n
times typical (offset 1Fh)
(0000h = not supported)
24h
0000h
Maximum timeout for multi-byte program or page write, 2
n
times typical (offset 20h)
(0000h = not supported)
25h
0004h
Maximum timeout per individual block erase, 2
n
times typical (offset 21h)
(0000h = not supported)
26h
0000h
Maximum timeout for chip erase, 2
n
times typical (offset 22h)
(0000h = not supported)
相關PDF資料 |
PDF描述 |
|---|---|
| M59DR016C | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C120ZB1T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C120ZB6T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D100ZB1T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR016C120ZA6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M59DR016C120ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C120ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016CZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
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