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參數(shù)資料
| 型號： | M59DR016C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| 中文描述： | 16兆1兆x16插槽，雙行，頁1.8V電源閃存 |
| 文件頁數(shù)： | 1/37頁 |
| 文件大?。?/td> | 240K |
| 代理商： | M59DR016C |
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PRODUCT PREVIEW
March 2001
This is preliminary information on a new product now in development. Details are subject to change without notice.
M59DR016C
M59DR016D
16 Mbit (1Mb x16, Dual Bank, Page)
1.8V Supply Flash Memory
I
SUPPLY VOLTAGE
– V
DD
= V
DDQ
= 1.65V to 2.2V for Program,
Erase and Read
– V
PP
= 12V for fast Program (optional)
I
ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 words
– Page Access: 35ns
– Random Access: 100ns
I
PROGRAMMING TIME
– 10μs by Word typical
– Double Word Programming Option
I
MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit - 12 Mbit
– Parameter Blocks (Top or Bottom location)
I
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
I
BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power Up
– Any combination of Blocks can be protected
I
COMMON FLASH INTERFACE (CFI)
I
64 bit SECURITY CODE
I
ERASE SUSPEND and RESUME MODES
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M59DR016C: 2293h
– Bottom Device Code, M59DR016D: 2294h
BGA
TFBGA48 (ZB)
8 x 6 balls array
Figure 1. Logic Diagram
AI04106
20
A0-A19
W
DQ0-DQ15
VDD
M59DR016C
M59DR016D
E
VSS
16
G
RP
WP
VDDQVPP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR016C120ZB1T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C120ZB6T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D100ZB1T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D100ZB6T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR016C100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C120ZA6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M59DR016C120ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C120ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
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