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參數(shù)資料
| 型號(hào)： | M59DR016C100ZB1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| 中文描述： | 16兆1兆x16插槽，雙行，頁1.8V電源閃存 |
| 文件頁數(shù)： | 3/37頁 |
| 文件大小： | 240K |
| 代理商： | M59DR016C100ZB1T |
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M59DR016C, M59DR016D
Organization
The M59DR016 is organized as 1Mb x16 bits. A0-
A19 are the address lines, DQ0-DQ15 are the
Data Input/Output. Memory control is provided by
Chip Enable E, Output Enable G and Write Enable
W inputs.
Reset RP is used to reset all the memory circuitry
and to set the chip in power down mode if this
function is enabled by a proper setting of the Con-
figuration Register. Erase and Program operations
are controlled by an internal Program/Erase Con-
troller (P/E.C.). Status Register data output on
DQ7 provides a Data Polling signal, DQ6 and DQ2
provide Toggle signals and DQ5 provides error bit
to indicate the state of the P/E.C operations.
Memory Blocks
The device features asymmetrically blocked archi-
tecture. M59DR016 has an array of 39 blocks and
is divided into two banks A and B, providing Dual
Bank operations. While programming or erasing in
Bank A, read operations are possible into Bank B
or vice versa. The memory also features an erase
suspend allowing to read or program in another
block within the same bank. Once suspended the
erase can be resumed. The Bank Size and Sector-
ization are summarized in Table 7. Parameter
Blocks are located at the top of the memory ad-
dress space for the M59DR016C, and at the bot-
tom for the M59DR016D. The memory maps are
shown in Tables 3, 4, 5 and 6.
The Program and Erase operations are managed
automatically by the P/E.C. Block protection
against Program or Erase provides additional data
security. All blocks are protected at Power Up. In-
structions are provided to protect or unprotect any
block in the application. A second register locks
the protection status while WP is low (see Block
Locking description). The Reset command does
not affect the configuration of unprotected blocks
and the Configuration Register status.
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Depends on range.
3.
Minimum Voltage may undershoot to –2V during transition and for less than 20ns.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
(2)
–40 to 85
°C
T
BIAS
Temperature Under Bias
–40 to 125
°C
T
STG
Storage Temperature
–55 to 155
°C
V
IO (3)
Input or Output Voltage
–0.5 to V
DDQ
+0.5
V
V
DD
, V
DDQ
Supply Voltage
–0.5 to 2.7
V
V
PP
Program Voltage
–0.5 to 13
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR016C100ZB6T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C120ZB1T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C120ZB6T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016D | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR016C100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C120ZA6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M59DR016C120ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016C120ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016CZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
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