參數(shù)資料
型號: M59DR008FN
廠商: 意法半導體
英文描述: 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
中文描述: 8兆位512KB的x16插槽,雙行,第低壓閃存
文件頁數(shù): 2/37頁
文件大?。?/td> 267K
代理商: M59DR008FN
M59DR008E, M59DR008F
2/37
Figure 2A. FBGA Connections (Top View)
AI03213B
C
B
A
8
7
6
5
4
3
2
1
E
D
F
A4
A7
VPP
A8
A11
A13
A0
E
DQ8
DQ5
DQ14
A16
VSS
DQ0
DQ9
DQ3
DQ6
DQ15
VDDQ
DQ1
DQ10
VDD
DQ7
VSS
DQ2
A2
A5
A17
W
A10
A14
A1
A3
A6
DU
DU
A9
A12
A15
RP
A18
DQ4
DQ13
G
DQ12
DQ11
WP
DU
Figure 2B. TSOP Connections
DQ3
DQ10
DQ9
DQ1
DQ2
A6
A5
DQ0
G
VSS
W
RP
A3
A2
A1
DQ6
DQ13
DQ5
A8
NC
A9
A17
A7
A10
DQ14
DQ12
DQ4
DQ15
DQ7
VDD
DQ11
VPP
WP
NC
A18
AI03214
M59DR008E
M59DR008F
12
13
1
24
25
36
37
48
DQ8
NC
A4
A12
A11
A13
A16
VDDQ
VSS
A15
A14
E
A0
Table 1. Signal Names
A0-A18
Address Inputs
DQ0-DQ15
Data Input/Outputs, Command Inputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Power Down
WP
Write Protect
V
DD
Circuitry Supply Voltage
V
DDQ
Input/Output Buffers Supply Voltage
V
PP
Optional Supply Voltage for
Fast Program & Erase
V
SS
Ground
NC
Not Connected Internally
DU
Don’t use as internally connected
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PDF描述
M59DR016 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M59DR008FZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR016 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016C100ZB1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016C100ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory