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參數(shù)資料
| 型號(hào)： | M59DR008F120N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 8兆位512KB的x16插槽，雙行，第低壓閃存 |
| 文件頁數(shù)： | 13/37頁 |
| 文件大?。?/td> | 267K |
| 代理商： | M59DR008F120N1T |
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M59DR008E, M59DR008F
Table 15. Query Structure Overview
Note: The Flash memory display the CFI data structure when CFI Query command is issued. In this table are listed the main sub-sections
detailled in Tables 16, 17 and 18. Query data are always presented on the lowest order data outputs.
Table 16. CFI Query Identification String
Note:
Query data are always presented on the lowest - order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Offset
Sub-section Name
Description
00h
Reserved
Reserved for algorithm-specific information
10h
CFI Query Identification String
Command set ID and algorithm data offset
1Bh
System Interface Information
Device timing & voltage information
27h
Device Geometry Definition
Flash device layout
P
Primary Algorithm-specific Extended Query table
Additional information specific to the Primary
Algorithm (optional)
A
Alternate Algorithm-specific Extended Query table
Additional information specific to the Alternate
Algorithm (optional)
Offset
Data
Description
00h
0020h
Manufacturer Code
01h
00A3h - bottom
00A2h - top
Device Code
02h-0Fh
reserved
Reserved
10h
0051h
Query Unique ASCII String "QRY"
11h
0052h
Query Unique ASCII String "QRY"
12h
0059h
Query Unique ASCII String "QRY"
13h
0002h
Primary Algorithm Command Set and Control Interface ID code 16 bit ID code
defining a specific algorithm
14h
0000h
15h
offset = P = 0040h
Address for Primary Algorithm extended Query table
16h
0000h
17h
0000h
Alternate Vendor Command Set and Control Interface ID Code second vendor
- specified algorithm supported (note: 0000h means none exists)
18h
0000h
19h
value = A = 0000h
Address for Alternate Algorithm extended Query table
note: 0000h means none exists
1Ah
0000h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR008F120N6T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008F120ZB1T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008F120ZB6T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008FN | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR016 | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR008F120N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008F120ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008F120ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008FN | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008FZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
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