參數(shù)資料
型號(hào): M59DR008F120N1T
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
中文描述: 8兆位512KB的x16插槽,雙行,第低壓閃存
文件頁數(shù): 27/37頁
文件大?。?/td> 267K
代理商: M59DR008F120N1T
27/37
M59DR008E, M59DR008F
Figure 8. Write AC Waveforms, E Controlled
Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E.
AI03218
E
G
W
A0-A18
DQ0-DQ15
VALID
VALID
VDD
tVDHWL
tEHWH
tEHEL
tWLEL
tAVEL
tEHGL
tELAX
tEHDX
tAVAV
tDVEH
tELEH
tGHEL
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M59DR008F120N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008F120ZB1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008F120ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008FN 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008FZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory