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參數(shù)資料
| 型號： | M59DR008F100ZB6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 8兆位512KB的x16插槽，雙行，第低壓閃存 |
| 文件頁數(shù)： | 12/37頁 |
| 文件大?。?/td> | 267K |
| 代理商： | M59DR008F100ZB6T |
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M59DR008E, M59DR008F
12/37
Table 14B. Instructions
(1,2)
Note: 1. Commands not interpreted in this table will default to read array mode.
2. For Coded cycles address inputs A11-A20 are don’t care.
3. X = Don’t Care.
4. The first cycles of the RD or AS instructions are followed by read operations. Any number of read cycles can occur after the com-
mand cycles.
5. During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased.
6. Program Address 1 and Program Address 2 must be consecutive addresses differing only for address bit A0.
7. High voltage on V
PP
(11.4V to 12.6V) is required for the proper execution of the Double Word Program instruction.
Mne.
Instr.
Cyc.
1st Cyc.
2nd Cyc.
3rd Cyc.
4th Cyc.
5th Cyc.
6th Cyc.
BL
Block Lock
4
Addr.
555h
2AAh
555h
Block
Address
Data
AAh
55h
60h
2Fh
BE
Block Erase
6+
Addr.
555h
2AAh
555h
555h
2AAh
Block
Address
Data
AAh
55h
80h
AAh
55h
30h
BKE
Bank Erase
6
Addr.
555h
2AAh
555h
555h
2AAh
Bank
Address
Data
AAh
55h
80h
AAh
55h
10h
ES
Erase Suspend
1
Addr.
(3)
X
Read until Toggle stops, then read all the data needed
from any Blocks not being erased then Resume Erase.
Data
B0h
ER
Erase Resume
1
Addr.
Bank
Address
Read Data Polling or Toggle Bits until Erase completes or
Erase is suspended another time
Data
30h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR008E120N1T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E120N6T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E120ZB1T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E120ZB6T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008F120N1T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR008F120N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008F120N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008F120ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008F120ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008FN | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
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