參數(shù)資料
型號： M59BW10225N1T
廠商： 意法半導(dǎo)體
英文描述： 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
中文描述： 1兆位64Kb的x16插槽，突發(fā)低電壓快閃記憶體
文件頁數(shù)： 14/24頁
文件大?。?/td> 181K
代理商： M59BW10225N1T
M59BW102
14/24
Table 15. Write AC Characteristics, Chip Enable Controlled
(T
A
= 0 to 70°C)
Symbol
Alt
Parameter
M59BW102
Unit
25
V
CC
= 3.0V to 3.6V
Min
Max
t
AVAV
t
WC
Address Valid to Next Address Valid
55
ns
t
WLEL
t
WS
Write Enable Low to Chip Enable Low
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
30
ns
t
DVEH
t
DS
Input Valid to Chip Enable High
25
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
ns
t
EHWH
t
WH
Chip Enable High to Write Enable High
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
20
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
0
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
35
ns
t
GHEL
Output Enable High to Chip Enable Low
0
ns
t
VCHWL
t
VCS
V
CC
High to Write Enable Low
50
μs
t
EHGL
t
OEH
Chip Enable High to Output Enable Low
0
ns
Figure 10. Write AC Waveforms, E Controlled
Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E; ALE must be High.
AI02770
E
G
W
A0-A15
DQ0-DQ15
VALID
VALID
VCC
tVCHWL
tEHWH
tEHEL
tWLEL
tAVEL
tEHGL
tELAX
tEHDX
tAVAV
tDVEH
tELEH
tGHEL
相關(guān)PDF資料
PDF描述
M59BW102N 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
M59DR008 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100N1T Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
M59DR008E100N6T Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
M59DR008E100ZB1T 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M59BW102N 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
M59DR008 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
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