型號: | M59DR008EZB |
廠商: | 意法半導體 |
英文描述: | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
中文描述: | 8兆位512KB的x16插槽,雙行,第低壓閃存 |
文件頁數(shù): | 4/37頁 |
文件大?。?/td> | 267K |
代理商: | M59DR008EZB |
相關PDF資料 |
PDF描述 |
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M59DR008FZB | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR008EN | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR008F | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR008F100N1T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR008F100N6T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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M59DR008F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR008F100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR008F100N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR008F100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR008F100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |