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參數(shù)資料
| 型號(hào)： | M59BW102N |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1 Mbit 64Kb x16, Burst Low Voltage Flash Memory |
| 中文描述： | 1兆位64Kb的x16插槽，突發(fā)低電壓快閃記憶體 |
| 文件頁數(shù)： | 18/24頁 |
| 文件大?。?/td> | 181K |
| 代理商： | M59BW102N |
M59BW102
18/24
Table 19. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70°C)
Note: 1. All other timings are defined in Read AC Characteristics table.
Symbol
Parameter
M59BW102
Unit
25
V
CC
= 3.0V to 3.6V
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid (Program, W Controlled)
10
2400
μs
Write Enable High to DQ7 Valid (Chip Erase, W Controlled)
1
30
sec
t
EHQ7V
Chip Enable High to DQ7 Valid (Program, E Controlled)
10
2400
μs
Chip Enable High to DQ7 Valid (Chip Erase, E Controlled)
1
30
sec
t
Q7VQV
DQ7 Valid to Output Valid (Data Polling)
25
ns
t
WHQV
Write Enable High to Output Valid (Program)
10
2400
μs
Write Enable High to Output Valid (Chip Erase)
1
30
sec
t
EHQV
Chip Enable High to Output Valid (Program)
10
2400
μs
Chip Enable High to Output Valid (Chip Erase)
1
30
sec
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| M59DR008E100N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR008E100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory |
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