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參數(shù)資料
| 型號(hào)： | ADUC7032BSTZ-88-RL |
| 廠商： | Analog Devices Inc |
| 文件頁(yè)數(shù)： | 46/120頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC MCU 96K FLASH DUAL 48LQFP |
| 標(biāo)準(zhǔn)包裝： | 2,000 |
| 系列： | MicroConverter® ADuC7xxx |
| 核心處理器： | ARM7 |
| 芯體尺寸： | 16/32-位 |
| 速度： | 20.48MHz |
| 連通性： | LIN，SPI，UART/USART |
| 外圍設(shè)備： | POR，PSM，溫度傳感器，WDT |
| 輸入/輸出數(shù)： | 9 |
| 程序存儲(chǔ)器容量： | 96KB（48K x 16） |
| 程序存儲(chǔ)器類型： | 閃存 |
| RAM 容量： | 1.5K x 32 |
| 電壓 - 電源 (Vcc/Vdd)： | 3.5 V ~ 18 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 2x16b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 105°C |
| 封裝/外殼： | 48-LQFP |
| 包裝： | 帶卷 (TR) |
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ADuC7032-8L
Rev. A | Page 31 of 120
FLASH/EE MEMORY RELIABILITY
The Flash/EE memory array on the part is fully qualified for
two key Flash/EE memory characteristics: Flash/EE memory
cycling endurance and Flash/EE memory data retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. A single
endurance cycle is composed of four independent, sequential
events, defined as follows:
1.
Initial page erase sequence
2.
Read/verify sequence
3.
Byte program sequence
4.
Second read/verify sequence
In reliability qualification, every halfword (16-bits wide)
location of the three pages (top, middle, and bottom) in the
Flash/EE memory is cycled 10,000 times from 0x0000 to 0xFFFF.
As shown in Table 1, the Flash/EE memory endurance qualifica-
tion of the parts is carried out in accordance with JEDEC
Retention Lifetime Specification A117. The results allow the
specification of a minimum endurance figure over supply and
temperature of 10,000 cycles.
Retention quantifies the ability of the Flash/EE memory to
retain its programmed data over time. Again, the parts are
qualified in accordance with the formal JEDEC Retention
Lifetime Specification A117 at a specific junction temperature
(TJ = 85°C). As part of this qualification procedure, the Flash/EE
memory is cycled to its specified endurance limit, described
previously, before data retention is characterized. This means
that the Flash/EE memory is guaranteed to retain its data for its
fully specified retention lifetime every time the Flash/EE memory
is reprogrammed. Also, note that retention lifetime, based on
an activation energy of 0.6 eV, derates with TJ, as shown in
0
150
300
450
600
30
40
55
70
85
100
125
135
150
RE
T
E
NT
IO
N
(
Y
ea
rs
)
JUNCTION TEMPERATURE (°C)
05
98
6-
01
2
Figure 12. Flash/EE Memory Data Retention
CODE EXECUTION TIME FROM SRAM AND FLASH/EE
This section describes SRAM and Flash/EE memory access times
during execution for applications where execution time is critical.
Execution from SRAM
Fetching instructions from SRAM takes one clock cycle.
However, if the instruction involves reading or writing data to
memory, one or two extra cycles must be added. If the data is in
SRAM, one extra cycle is needed. If the data is in Flash/EE, two
extra cycles are needed to get the 32-bit data from Flash/EE.
A control flow instruction (for example, a branch instruction)
takes one cycle to fetch and two cycles to fill the pipeline with the
new instructions.
Execution from Flash/EE
In Thumb mode, where instructions are 16 bits, one cycle is
needed to fetch any instruction.
In ARM mode, with CD = 0, two cycles are needed to fetch the
32-bit instructions. With CD > 0, no extra cycles are required
for the fetch because the Flash/EE memory continues to be
clocked at full speed. In addition, some dead time is needed
before accessing data for any value of CD bits.
Timing is identical in both modes when executing instructions
that involve using the Flash/EE for data memory. If the instruction
to be executed is a control flow instruction, an extra cycle is
needed to decode the new address of the program counter, and
then four cycles are needed to fill the pipeline if CD = 0.
A data processing instruction involving only the core register
does not require any extra clock cycles. Data transfer instructions
are more complex and are summarized in Table 19.
Table 19. Typical Execution Cycles in ARM/Thumb Mode
Instruction
Fetch Cycle
Dead Time
Data Access
LD
2/1
1
2
LDH
2/1
1
LDM/POP
2/1
N
2 × N
STR
2/1
1
2 × 50 μs
STRH
2/1
1
50 μs
STM/PUSH
2/1
N
2 × N × 50 μs
With 1 < N ≤ 16, N is the number of registers to load or store in
the multiple load/store instruction.
By default, Flash/EE code execution is suspended during any
Flash/EE erase or write cycle. A page (512 bytes) erase cycle
takes 20 ms, and a write (16 bits) word command takes 50 μs.
However, the Flash/EE memory controller allows erase/write
cycles to be aborted if the ARM core receives an enabled interrupt
during the current Flash/EE erase/write cycle. The ARM7 can,
therefore, immediately service the interrupt and then return to
repeat the Flash/EE command. The abort operation typically
takes 10 clock cycles. If the abort operation is not feasible, it is
possible to run Flash/EE memory programming code and the
relevant interrupt routines from SRAM, allowing the core to
service the interrupt immediately.
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相關(guān)代理商/技術(shù)參數(shù) |
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| ADUC7032BSTZ-8L | 制造商:Analog Devices 功能描述:FLASH 96K ARM7 TRIPLE 16-BIT ADC LIN IC. - Trays |
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| ADUC7032BSTZ-8V-RL | 功能描述:IC BATTERY SENSOR PREC 48-LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC7xxx 標(biāo)準(zhǔn)包裝:1,500 系列:AVR® ATtiny 核心處理器:AVR 芯體尺寸:8-位 速度:16MHz 連通性:I²C，LIN，SPI，UART/USART，USI 外圍設(shè)備:欠壓檢測(cè)/復(fù)位，POR，PWM，溫度傳感器，WDT 輸入/輸出數(shù):16 程序存儲(chǔ)器容量:8KB（4K x 16） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:512 x 8 RAM 容量:512 x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 11x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:帶卷 (TR) |
| ADUC7033 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Integrated Precision Battery Sensor For Automotive |
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