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| 型號： | ADUC7032BSTZ-88-RL |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 41/120頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC MCU 96K FLASH DUAL 48LQFP |
| 標(biāo)準(zhǔn)包裝： | 2,000 |
| 系列： | MicroConverter® ADuC7xxx |
| 核心處理器： | ARM7 |
| 芯體尺寸： | 16/32-位 |
| 速度： | 20.48MHz |
| 連通性： | LIN，SPI，UART/USART |
| 外圍設(shè)備： | POR，PSM，溫度傳感器，WDT |
| 輸入/輸出數(shù)： | 9 |
| 程序存儲器容量： | 96KB（48K x 16） |
| 程序存儲器類型： | 閃存 |
| RAM 容量： | 1.5K x 32 |
| 電壓 - 電源 (Vcc/Vdd)： | 3.5 V ~ 18 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 2x16b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 105°C |
| 封裝/外殼： | 48-LQFP |
| 包裝： | 帶卷 (TR) |
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ADuC7032-8L
Rev. A | Page 27 of 120
Command Sequence for Executing a Mass Erase
Because of the significance of the mass erase command,
a specific code sequence must be executed to initiate this
operation.
1.
Set Bit 3 in FEExMOD.
2.
Write 0xFFC3 in FEExADR.
3.
Write 0x3CFF in FEExDAT.
4.
Run the mass erase command 0x06 in FEExCON.
To run the mass-erase command via FEE0CON, write protection
on the lower 64 kB must be disabled; that is, FEE1HID and
FEE1PRO are set to 0xFFFFFFFF. This is accomplished by first
removing the protection or by erasing the lower 64 kB first.
Command Sequence Example
The command sequence for executing a mass erase is illustrated in the following example:
Int a = FEExSTA;
// Ensure FEExSTA is cleared
FEExMOD = 0x08;
FEExADR = 0xFFC3;
FEExDAT = 0x3CFF;
FEExCON = 0x06;
// Mass-Erase command
while (FEExSTA & 0x04){}
// Wait for command to finish
FEE0STA and FEE1STA Registers
Name:
FEE0STA and FEE1STA
Address:
0xFFFF0E00 and 0xFFFF0E80
Default Value (Both Registers):
0x20
Access:
Read only
Function:
These 8-bit read-only registers can be read by user code and reflect the current status of the Flash/EE memory controllers.
Table 15. FEE0STA and FEE1STA MMR Bit Designations
Bit
15 to 4
Not Used. These bits are not used and are always read as 0.
3
Flash Interrupt Status Bit.
Set automatically when an interrupt occurs, that is, when a command is complete and the Flash/EE interrupt enable bit in the
FEExMOD register is set.
Cleared automatically when the FEExSTA register is read by user code.
2
Flash/EE Controller Busy.
Set automatically when the Flash/EE controller is busy.
Cleared automatically when the controller is not busy.
1
Command Fail.
Set automatically when a command written to FEExCON completes unsuccessfully.
Cleared automatically when the FEExSTA register is read by user code.
0
Command Successful.
Set automatically by MCU when a command is completed successfully.
Cleared automatically when the FEExSTA register is read by user code.
1 x is 0 or 1 to designate Flash/EE Block 0 or Flash/EE Block 1.
FEE0ADR and FEE1ADR Registers
Name:
FEE0ADR and FEE1ADR
Address:
0xFFFF0E10 and 0xFFFF0E90
Default Value:
Nonzero (FEE0ADR), 0x0000 (FEE1ADR)
Access:
Read/write
Function:
This 16-bit register dictates the address acted upon by any Flash/EE command executed via FEExCON.
FEE0DAT and FEE1DAT Registers
Name:
FEE0DAT and FEE1DAT
Address:
0xFFFF0E0C and 0xFFFF0E8C
Default Value (Both Registers):
0x0000
Access:
Read/write
Function
: This 16-bit register contains the data either read from or to be written to the Flash/EE memory controllers.
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| ADUC7032BSTZ-8V-RL | 功能描述:IC BATTERY SENSOR PREC 48-LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC7xxx 標(biāo)準(zhǔn)包裝:1,500 系列:AVR® ATtiny 核心處理器:AVR 芯體尺寸:8-位 速度:16MHz 連通性:I²C，LIN，SPI，UART/USART，USI 外圍設(shè)備:欠壓檢測/復(fù)位，POR，PWM，溫度傳感器，WDT 輸入/輸出數(shù):16 程序存儲器容量:8KB（4K x 16） 程序存儲器類型:閃存 EEPROM 大小:512 x 8 RAM 容量:512 x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 11x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:帶卷 (TR) |
| ADUC7033 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Integrated Precision Battery Sensor For Automotive |
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