參數(shù)資料
型號: S70WS512N00BFWAB2
廠商: Spansion Inc.
英文描述: Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述: 同硅晶片堆疊多芯片產(chǎn)品(MCP)的512兆位(32兆× 16位)的CMOS 1.8伏,只有同時讀/寫,突發(fā)模式閃存
文件頁數(shù): 85/93頁
文件大小: 846K
代理商: S70WS512N00BFWAB2
86
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
Table 13.1 Memory Array Commands
Command Sequence
( Notes)
Asynchronous Read (
6
)
Reset (
7
)
Manufacturer ID
Device ID (
9
)
C
Bus Cycles ( Notes 1–5)
Third
Addr
Data
First
Second
Addr
Fourth
Addr
Fifth
Sixth
Addr
RA
XXX
555
555
Data
RD
F0
AA
AA
Data
Data
Addr
Data
Addr
Data
1
1
4
6
A
s
8
)
2AA
2AA
55
55
[BA]555
[BA]555
90
90
[BA]X00
[BA]X01
0001
227E
BA+ X0E
Data
BA+ X0F
2200
Indicator Bits (
10
)
4
555
AA
2AA
55
[BA]555
90
[BA]X03
Data
Program
Write to Buffer (
11
)
Program Buffer to Flash
Write to Buffer Abort Reset (
12
)
Chip Erase
Sector Erase
Erase/Program Suspend (
13
)
Erase/Program Resume (
14
)
Set Configuration Register (
18
)
Read Configuration Register
CFI Query (
15
)
Entry
Program (
16
)
CFI (
16
)
4
6
1
3
6
6
1
1
4
4
1
3
2
1
555
555
SA
555
555
555
BA
BA
555
555
AA
AA
29
AA
AA
AA
B0
30
AA
AA
98
AA
A0
98
2AA
2AA
55
55
555
PA
A0
25
PA
PA
PD
WC
PA
PD
WBL
PD
2AA
2AA
2AA
55
55
55
555
555
555
F0
80
80
555
555
AA
AA
2AA
2AA
55
55
555
SA
10
30
2AA
2AA
55
55
555
555
D0
C6
X00
X00
CR
CR
[BA]555
555
XXX
XXX
U
M
2AA
PA
55
PD
555
20
Reset
2
XXX
90
XXX
00
S
Entry
Program (
17
)
Read (
17
)
3
4
1
555
555
00
AA
AA
Data
2AA
2AA
55
55
555
555
88
A0
PA
PD
Exit (
17
)
4
555
AA
2AA
55
555
90
XXX
00
Legend:
X = Don’t care.
RA = Read Address.
RD = Read Data.
PA = Program Address. Addresses latch on the rising edge of the
AVD# pulse or active edge of CLK, whichever occurs first.
PD = Program Data. Data latches on the rising edge of WE# or CE#
pulse, whichever occurs first.
SA = Sector Address. WS256N = A23–A14; WS128N = A22–A14;
WS064N = A21–A14.
BA = Bank Address. WS256N = A23–A20; WS128N = A22–A20;
WS064N = A21–A18.
CR = Configuration Register data bits D15–D0.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes:
1.
2.
3.
4.
See
Table 8.1
for description of bus operations.
All values are in hexadecimal.
Shaded cells indicate read cycles.
Address and data bits not specified in table, legend, or notes are
don’t cares (each hex digit implies 4 bits of data).
Writing incorrect address and data values or writing them in the
improper sequence may place the device in an unknown state.
The system must write the reset command to return the device
to reading array data.
No unlock or command cycles required when bank is reading
array data.
Reset command is required to return to reading array data (or to
the erase-suspend-read mode if previously in Erase Suspend)
when a bank is in the autoselect mode, or if DQ5 goes high
(while the bank is providing status information) or performing
sector lock/unlock.
The system must provide the bank address. See
Autoselect
section for more information
.
Data in cycle 5 is 2230 (WS256N), 2232 (WS064N), or 2231
(WS128N).
10. See
Table 8.9
for indicator bit values.
5.
6.
7.
8.
9.
11. Total number of cycles in the command sequence is determined
by the number of words written to the write buffer.
12. Command sequence resets device for next command after write-
to-buffer operation.
13. System may read and program in non-erasing sectors, or enter
the autoselect mode, when in the Erase Suspend mode. The
Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
14. Erase Resume command is valid only during the Erase Suspend
mode, and requires the bank address.
15. Command is valid when device is ready to read array data or
when device is in autoselect mode. Address equals 55h on all
future devices, but 555h for WS256N/128N/064N.
16. Requires Entry command sequence prior to execution. Unlock
Bypass Reset command is required to return to reading array
data.
17. Requires Entry command sequence prior to execution. Secured
Silicon Sector Exit Reset command is required to exit this mode;
device may otherwise be placed in an unknown state.
18. Requires reset command to configure the Configuration Register.
相關(guān)PDF資料
PDF描述
S70WS512N00BFWAB3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S71AL016D Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71AL016D02 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71AL016D02-B7 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71AL016D02BAWBF0 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S70WS512N00BFWAB3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70Y 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S70YR 功能描述:整流器 1600V 70A REV Leads Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S-70Z 制造商:Triad Magnetics 功能描述:
S710 功能描述:MOUNTING NUT RoHS:是 類別:電位計(jì),可變電阻器 >> 配件 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 附件類型:支架 適用于相關(guān)產(chǎn)品:Bourns 3250 和 3252 系列電位計(jì) 配用:3252X-502LF-ND - TRIMMER 5K OHM 0.75W TH3252X-202LF-ND - TRIMMER 2K OHM 0.75W TH3252X-103LF-ND - TRIMMER 10K OHM 0.75W TH3252W-503LF-ND - TRIMMER 50K OHM 0.75W TH3252W-502LF-ND - TRIMMER 5K OHM 0.75W TH3252W-501LF-ND - TRIMMER 500 OHM 0.75W TH3252W-204LF-ND - TRIMMER 200K OHM 0.75W TH3252W-203LF-ND - TRIMMER 20K OHM 0.75W TH3252W-202LF-ND - TRIMMER 2K OHM 0.75W TH3252W-201LF-ND - TRIMMER 200 OHM 0.75W TH更多... 其它名稱:H26S