參數(shù)資料
型號(hào): S70WS512N00BFWAB2
廠商: Spansion Inc.
英文描述: Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述: 同硅晶片堆疊多芯片產(chǎn)品(MCP)的512兆位(32兆× 16位)的CMOS 1.8伏,只有同時(shí)讀/寫,突發(fā)模式閃存
文件頁數(shù): 77/93頁
文件大?。?/td> 846K
代理商: S70WS512N00BFWAB2
78
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
Notes:
1.
2.
The timings are similar to synchronous read timings.
VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is
complete, .
RDY is active with data (D8 = 1 in the Configuration Register). When D8 = 0 in the Configuration Register, RDY is active
one clock cycle before data.
3.
Figure 12.19 Synchronous Data Polling Timings/Toggle Bit Timings
Note:
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to
toggle DQ2 and DQ6
Figure 12.20 DQ2 vs. DQ6
CE#
CLK
AVD#
Addresses
OE#
Data
RDY
Status Data
Status Data
V A
V A
t
IACC
t
IACC
Enter
Embedded
Erasing
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
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