參數(shù)資料
型號(hào)： S70WS512N00BFWAB2
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存
文件頁(yè)數(shù)： 44/93頁(yè)
文件大小： 846K
代理商： S70WS512N00BFWAB2
March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
45
A d v a n c e I n f o r m a t i o n
Figure 8.6 Write Operation Status Flowchart
START
Read 1
DQ7= valid
data
YES
NO
Read 1
DQ5= 1
YES
NO
Write Buffer
Programming
YES
NO
Device BUSY,
Re-Poll
Read3
DQ1= 1
YES
NO
Read 2
Read 3
Read 2
Read 3
Read 2
Read 3
Read3
DQ1= 1
AND DQ7
≠
Valid Data
YES
NO
(Note 4)
Write Buffer
Operation
Failed
DQ6
toggling
YES
NO
TIMEOUT
(Note 1)
(Note 3)
Programming
Operation
DQ6
toggling
YES
NO
YES
NO
DQ2
toggling
YES
NO
Erase
Operation
Complete
Device in
Erase/Suspend
Mode
Program
Operation
Failed
DEVICE
ERROR
Erase
Operation
Complete
Read3=
valid data
YES
NO
Notes:
1) DQ6 is toggling if Read2 DQ6 does not equal Read3 DQ6.
2) DQ2 is toggling if Read2 DQ2 does not equal Read3 DQ2.
3) May be due to an attempt to program a 0 to 1. Use the RESET
command to exit operation.
4) Write buffer error if DQ1 of last read = 1.
5) Invalid state, use RESET command to exit operation.
6) Valid data is the data that is intended to be programmed or all 1's for
an erase operation.
7) Data polling algorithm valid for all operations except advanced sector
protection.
Device BUSY,
Re-Poll
Device BUSY,
Re-Poll
Device BUSY,
Re-Poll
(Note 1)
(Note 2)
(Note 6)
(Note 5)
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