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參數(shù)資料
| 型號(hào)： | S70WS512N00BFWAB2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| 中文描述： | 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫(xiě)，突發(fā)模式閃存 |
| 文件頁(yè)數(shù)： | 55/93頁(yè) |
| 文件大?。?/td> | 846K |
| 代理商： | S70WS512N00BFWAB2 |
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56
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
Notes
1.
There is no special addressing order required for programming the password. Once the
Password is written and verified, the Password Mode Locking Bit must be set in order to pre-
vent access.
The Password Program Command is only capable of programming
0
s. Programming a
1
after
a cell is programmed as a
0
results in a time-out with the cell as a
0
.
The password is all
1
s when shipped from the factory.
All 64-bit password combinations are valid as a password.
There is no means to verify what the password is after it is set.
The Password Mode Lock Bit, once set, prevents reading the 64-bit password on the data
bus and further password programming.
The Password Mode Lock Bit is not erasable.
The lower two address bits (A1–A0) are valid during the Password Read, Password Program,
and Password Unlock.
The exact password must be entered in order for the unlocking function to occur.
10. The Password Unlock command cannot be issued any faster than 1 μs at a time to prevent
a hacker from running through all the 64-bit combinations in an attempt to correctly match
a password.
11. Approximately 1 μs is required for unlocking the device after the valid 64-bit password is
given to the device.
12. Password verification is only allowed during the password programming operation.
13. All further commands to the password region are disabled and all operations are ignored.
14. If the password is lost after setting the Password Mode Lock Bit, there is no way to clear the
PPB Lock Bit.
15. Entry command sequence must be issued prior to any of any operation and it disables reads
and writes for Bank 0. Reads and writes for other banks excluding Bank 0 are allowed.
16. If the user attempts to program or erase a protected sector, the device ignores the com-
mand and returns to read mode.
17. A program or erase command to a protected sector enables status polling and returns to
read mode without having modified the contents of the protected sector.
18. The programming of the DYB, PPB, and PPB Lock for a given sector can be verified by writing
individual status read commands DYB Status, PPB Status, and PPB Lock Status to the
device.
2.
3.
4.
5.
6.
7.
8.
9.
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| S70WS512N00BFWAB3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
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| S70YR | 功能描述:整流器 1600V 70A REV Leads Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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