參數(shù)資料
型號： S70WS512N00BFWAB2
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存
文件頁數(shù)： 42/93頁
文件大小： 846K
代理商： S70WS512N00BFWAB2
March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
43
A d v a n c e I n f o r m a t i o n
The following are C source code examples of using the unlock bypass entry, program, and exit
functions. Refer to the
Spansion Low Level Driver User’s Guide
(available soon on
www.amd.com
and
www.fujitsu.com
) for general information on Spansion Flash “memory software development
guidelines.
/* Example: Unlock Bypass Entry Command */
*( (UINT16 *)bank_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)bank_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)bank_addr + 0x555 ) = 0x0020; /* write unlock bypass command */
/* At this point, programming only takes two write cycles. */
/* Once you enter Unlock Bypass Mode, do a series of like */
/* operations (programming or sector erase) and then exit */
/* Unlock Bypass Mode before beginning a different type of */
/* operations. */
/* Example: Unlock Bypass Program Command */
/* Do while in Unlock Bypass Entry Mode! */
*( (UINT16 *)bank_addr + 0x555 ) = 0x00A0; /* write program setup command */
*( (UINT16 *)pa ) = data; /* write data to be programmed */
/* Poll until done or error. */
/* If done and more to program, */
/* do above two cycles again. */
/* Example: Unlock Bypass Exit Command */
*( (UINT16 *)base_addr + 0x000 ) = 0x0090;
*( (UINT16 *)base_addr + 0x000 ) = 0x0000;
8.5.9
W rite Operation Status
The device provides several bits to determine the status of a program or erase operation. The
following subsections describe the function of DQ1, DQ2, DQ3, DQ5, DQ6, and DQ7.
DQ7: Data# Polling.
The Data# Polling bit, DQ7, indicates to the host system whether an Em-
bedded Program or Erase algorithm is in progress or completed, or whether a bank is in Erase
Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command se-
Software Functions and Sample Code
Table 8.20 Unlock Bypass Entry
(LLD Function = lld_ UnlockBypassEntryCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 554h
Base + 2AAh
0055h
3
Entry Command
Write
Base + AAAh
Base + 555h
0020h
Table 8.21 Unlock Bypass Program
(LLD Function = lld_ UnlockBypassProgramCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Program Setup Command
Write
Base + xxxh
Base + xxxh
00A0h
2
Program Command
Write
Program Address
Program Address
Program Data
Table 8.22 Unlock Bypass Reset
(LLD Function = lld_ UnlockBypassResetCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Reset Cycle 1
Write
Base + xxxh
Base + xxxh
0090h
2
Reset Cycle 2
Write
Base + xxxh
Base + xxxh
0000h
相關(guān)PDF資料
PDF描述
S70WS512N00BFWAB3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S71AL016D Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71AL016D02 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71AL016D02-B7 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71AL016D02BAWBF0 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S70WS512N00BFWAB3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70Y 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S70YR 功能描述:整流器 1600V 70A REV Leads Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S-70Z 制造商:Triad Magnetics 功能描述:
S710 功能描述:MOUNTING NUT RoHS:是 類別:電位計，可變電阻器 >> 配件 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 附件類型:支架 適用于相關(guān)產(chǎn)品:Bourns 3250 和 3252 系列電位計 配用:3252X-502LF-ND - TRIMMER 5K OHM 0.75W TH3252X-202LF-ND - TRIMMER 2K OHM 0.75W TH3252X-103LF-ND - TRIMMER 10K OHM 0.75W TH3252W-503LF-ND - TRIMMER 50K OHM 0.75W TH3252W-502LF-ND - TRIMMER 5K OHM 0.75W TH3252W-501LF-ND - TRIMMER 500 OHM 0.75W TH3252W-204LF-ND - TRIMMER 200K OHM 0.75W TH3252W-203LF-ND - TRIMMER 20K OHM 0.75W TH3252W-202LF-ND - TRIMMER 2K OHM 0.75W TH3252W-201LF-ND - TRIMMER 200 OHM 0.75W TH更多... 其它名稱:H26S
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*