參數(shù)資料
型號(hào)： S70WS512N00BFWAB2
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫(xiě)，突發(fā)模式閃存
文件頁(yè)數(shù)： 82/93頁(yè)
文件大?。?/td> 846K
代理商： S70WS512N00BFWAB2
March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
83
A d v a n c e I n f o r m a t i o n
12.8.7
Erase and Programming Performance
Notes:
1.
Typical program and erase times assume the following conditions: 25
°
C, 1.8 V V
CC
, 10,000 cycles; checkerboard data
pattern.
Under worst case conditions of 90°C, V
CC
= 1.70 V, 100,000 cycles.
Typical chip programming time is considerably less than the maximum chip programming time listed, and is based on
utilizing the Write Buffer.
In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command.
See the
Appendix
for further information about command definitions.
Contact the local sales office for minimum cycling endurance values in specific applications and operating conditions.
Refer to Application Note
Erase Suspend/Resume Timing
for more details.
Word programming specification is based upon a single word programming operation not utilizing the write buffer.
The content in this document is Advance information for the S29WS064N and S29WS128N. Content in this document
is Preliminary for the S29W256N.
2.
3.
4.
5.
6.
7.
8.
9.
Parameter
Typ (
Note 1
)
Max (
Note 2
)
Unit
Comments
Sector Erase Time
64 Kword
V
CC
0.6
3.5
s
Excludes 00h
programming prior
to erasure (
Note 4
)
16 Kword
V
CC
< 0.15
2
Chip Erase Time
V
CC
153.6 (WS256N)
77.4 (WS128N)
39.3 (WS064N)
308 (WS256N)
154 (WS128N)
78 (WS064N)
s
ACC
130.6 (WS256N)
65.8 (WS128N)
33.4 (WS064N)
262 (WS256N)
132 (WS128N)
66 (WS064N)
Single Word Programming Time
(
Note 8
)
V
CC
40
400
μs
ACC
24
240
Effective Word Programming Time
utilizing Program Write Buffer
V
CC
9.4
94
μs
ACC
6
60
Total 32-Word Buffer Programming
Time
V
CC
300
3000
μs
ACC
192
1920
Chip Programming Time (
Note 3
)
V
CC
157.3 (WS256N)
78.6 (WS128N)
39.3 (WS064N)
314.6 (WS256N)
157.3 (WS128N)
78.6 (WS064N)
s
Excludes system
level overhead
(
Note 5
)
ACC
100.7 (WS256N)
50.3 (WS128N)
25.2 (WS064N)
201.3 (WS256N)
100.7 (WS128N)
50.3 (WS064N)
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