參數(shù)資料
型號： S70WS512N00BFWAB2
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存
文件頁數(shù)： 37/93頁
文件大?。?/td> 846K
代理商： S70WS512N00BFWAB2
38
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
Notes:
1.
2.
See
Table 13.1
for erase command sequence.
See the section on DQ3 for information on the sector erase timeout.
Figure 8.5 Sector Erase Operation
No
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Write Sector Erase Cycles:
Address 555h, Data 80h
Address 555h, Data AAh
Address 2AAh, Data 55h
Sector Address, Data 30h
Write Additional
Sector Addresses
FAIL. Write reset command
to return to reading array.
PASS. Device returns
to reading array.
Wait 4
μ
s
Perform Write Operation
Status Algorithm
Select
Additional
Sectors
Unlock Cycle 1
Unlock Cycle 2
Yes
Yes
Yes
Yes
Yes
No
No
No
No
Last Sector
Selected
Done
DQ5 = 1
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
Error condition (Exceeded Timing Limits)
Status may be obtained by reading DQ7, DQ6 and/or DQ2.
Poll DQ3.
DQ3 = 1
Each additional cycle must be written within
t
SEA
timeout
Timeout resets after each additional cycle is written
The host system may monitor DQ3 or wait
t
SEA
to ensure
acceptance of erase commands
No limit on number of sectors
Commands other than Erase Suspend or selecting
additional sectors for erasure during timeout reset device
to reading array data
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