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參數(shù)資料
| 型號： | S70WS512N00BFWAB2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| 中文描述： | 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 33/93頁 |
| 文件大?。?/td> | 846K |
| 代理商： | S70WS512N00BFWAB2 |
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S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
counter decrements for each data load operation, NOT for each unique write-buffer-address loca-
tion. Once the specified number of write buffer locations have been loaded, the system must then
write the
Program Buffer
to Flash command at the Sector Address. Any other address/data write
combinations abort the Write Buffer Programming operation. The device goes
busy
. The Data Bar
polling techniques should be used while monitoring the last address location loaded into the write
buffer. This eliminates the need to store an address in memory because the system can load the
last address location, issue the program confirm command at the last loaded address location,
and then data bar poll at that same address. DQ7, DQ6, DQ5, DQ2, and DQ1 should be monitored
to determine the device status during Write Buffer Programming.
The write-buffer
embedded
programming operation can be suspended using the standard sus-
pend/resume commands. Upon successful completion of the Write Buffer Programming operation,
the device returns to READ mode.
The Write Buffer Programming Sequence is ABORTED under any of the following conditions:
Load a value that is greater than the page buffer size during the
Number of Locations to Pro-
gram step
.
Write to an address in a sector different than the one specified during the Write-Buffer-Load
command.
Write an Address/Data pair to a different write-buffer-page than the one selected by the
Starting Address
during the
write buffer data loading
stage of the operation.
Write data other than the
Confirm Command
after the specified number of
data load
cycles.
The ABORT condition is indicated by DQ1 = 1, DQ7 = Data# (for the
last address location loaded
),
DQ6 = TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was
ABORTED. A
Write-to-Buffer-Abort reset
command sequence is required when using the write
buffer Programming features in Unlock Bypass mode. Note that the Secured Silicon sector, au-
toselect, and CFI functions are unavailable when a program operation is in progress.
Write buffer programming is allowed in any sequence of memory (or address) locations. These
flash devices are capable of handling multiple write buffer programming operations on the same
write buffer address range without intervening erases.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed. Write buffer programming is approximately eight times faster than programming
one word at a time.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S70WS512N00BFWAB3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
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| S70YR | 功能描述:整流器 1600V 70A REV Leads Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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