參數(shù)資料
型號: S70WS512N00BFWAB2
廠商: Spansion Inc.
英文描述: Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述: 同硅晶片堆疊多芯片產(chǎn)品(MCP)的512兆位(32兆× 16位)的CMOS 1.8伏,只有同時讀/寫,突發(fā)模式閃存
文件頁數(shù): 10/93頁
文件大小: 846K
代理商: S70WS512N00BFWAB2
8
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
2
Ordering Information
The ordering part number is formed by a valid combination of the following:
Package Marking Note:
The package marking omits the leading
S
from the ordering part number.
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult
your local sales office to confirm availability of specific valid combinations and to check on newly
released combinations.
S70WS 512
N
0
0
BA
W
A
3
0
Packing Type
0
=
2
=
3
=
DY B Pow er Up, Speed Combinations
3
=
0, 54 MHz
B
=
1, 54 MHz
2
=
0, 66 MHz
A
=
1, 66 MHz
Tray
7” Tape and Reel
13” Tape and Reel
Package Modifier
A
=
1.2 mm, 8 x 11.6, 84-ball FBGA (TSB084)
Temperature Range
W
=
Wireless (-25
°
C to + 85
°
C)
Package Type
BA
=
Very Thin Fine-Pitch BGA
Lead (Pb)-free Compliant Package
Very Thin Fine-Pitch BGA
Lead (Pb)-free Package
BF
=
Chip Contents—2
No content
pSRAM Density
No content
Process Technology
N
=
110nm MirrorBit Technology
Flash Density
512
=
512Mb (2x256Mb)
Device Family
S70WS =
Multi-Chip Product
1.8 Volt-only Simultaneous Read/Write Burst Mode
Flash Memory Same-Die Stack
Table 2.1 MCP Configurations and Valid Combinations
Valid Combinations
BA, BF
S70WS512N00
0
W
A
2, A, 3, B
相關(guān)PDF資料
PDF描述
S70WS512N00BFWAB3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
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