參數(shù)資料
型號: uPSD3233
廠商: 意法半導(dǎo)體
英文描述: Flash Programmable System Device with 8032 Microcontroller Core(嵌入高速“8032微控制器核”的Flash型可編程系統(tǒng)器)
中文描述: 閃存可編程系統(tǒng)器件與8032微控制器內(nèi)核(嵌入高速“8032微控制器核”的閃存型可編程系統(tǒng)器)
文件頁數(shù): 156/164頁
文件大小: 1133K
代理商: UPSD3233
μ
PSD3200 FAMILY
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DRAFT(Thursday 20 June 2002, 13:15).
Table 134. Reset (Reset)Timing (5V devices)
Note: 1. Reset (RESET) does not reset Flash memory Program or Erase cycles.
2. Warm reset aborts Flash memory Program or Erase cycles, and puts the device in Read mode.
Table 135. Reset (Reset) Timing (3V devices)
Note: 1. Reset (RESET) does not reset Flash memory Program or Erase cycles.
2. Warm reset aborts Flash memory Program or Erase cycles, and puts the device in Read mode.
Table 136. V
STBYON
Timing (5V devices)
Symbol
Note: 1. V
STBYON
timing ismeasured at V
CC
ramp rate of 2 ms.
Table 137. V
STBYON
Timing (3V devices)
Symbol
Note: 1. V
STBYON
timing ismeasured at V
CC
ramp rate of 2 ms.
Symbol
Parameter
Conditions
Min
Max
Unit
t
NLNH
RESET Active Low Time
1
150
ns
t
NLNH–PO
Power On Reset ActiveLow Time
1
ms
t
NLNH–A
Warm Reset (on the PSD834Fx)
2
25
μ
s
t
OPR
RESET High to Operational Device
120
ns
Symbol
Parameter
Conditions
Min
Max
Unit
t
NLNH
RESET Active Low Time
1
300
ns
t
NLNH–PO
Power On Reset ActiveLow Time
1
ms
t
NLNH–A
Warm Reset (on the PSD834Fx)
2
25
μ
s
t
OPR
RESET High to Operational Device
300
ns
Parameter
Conditions
Min
Typ
Max
Unit
t
BVBH
V
STBY
Detection to V
STBYON
Output High
(Note
1
)
20
μ
s
t
BXBL
V
STBY
Off Detection to V
STBYON
Output
Low
(Note
1
)
20
μ
s
Parameter
Conditions
Min
Typ
Max
Unit
t
BVBH
V
STBY
Detection to V
STBYON
Output High
(Note
1
)
20
μ
s
t
BXBL
V
STBY
Off Detection to V
STBYON
Output
Low
(Note
1
)
20
μ
s
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