
14.0 Preliminary Electrical Characteristics
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
CC
)
DC Input Voltage (V
IN
)
DC Output Voltage (V
OUT
)
Storage Temperature Range (T
STG
)
Power Dissipation (PD)
b
0.5V to
a
7.0V
b
0.5V to V
CC
a
0.5V
b
0.5V to V
CC
a
0.5V
b
65
§
C to
a
150
§
C
500 mW
260
§
C
1600V
Lead Temp. (TL) (Soldering, 10 sec.)
ESD rating (R
ZAP
e
1.5k, C
ZAP
e
120 pF)
Preliminary DC Specifications
T
A
e
0
§
C to 70
§
C, V
CC
e
5V
g
5%, unless otherwise specified
Symbol
Parameter
Conditions
Min
Max
Units
V
OH
Minimum High Level Output Voltage
(Notes 1, 4)
I
OH
e b
20
m
A
I
OH
e b
2.0 mA
V
CC
b
0.1
3.5
V
V
V
OL
Minimum Low Level Output Voltage
(Notes 1, 4)
I
OL
e
20
m
A
I
OL
e
2.0 mA
0.1
0.4
V
V
V
IH
Minimum High Level Input Voltage
(Note 2)
2.0
V
V
IH2
Minimum High Level Input Voltage
for RACK, WACK (Note 2)
2.7
V
V
IL
Minimum Low Level Input Voltage
(Note 2)
0.8
V
V
IL2
Minimum Low Level Input Voltage
For RACK, WACK (Note 2)
0.6
V
I
IN
Input Current
V
I
e
V
CC
or GND
b
1.0
a
1.0
m
A
I
OZ
Maximum TRI-STATE
Output Leakage Current
V
OUT
e
V
CC
or GND
b
10
a
10
m
A
I
CC
Average Supply Current
(Note 3)
TXCK
e
10 MHz
RXCK
e
10 MHz
BSCK
e
20 MHz
I
OUT
e
0
m
A
V
IN
e
V
CC
or GND
40
mA
Note 1:
These levels are tested dynamically using a limited amount of functional test patterns, please refer to AC Test Load.
Note 2:
Limited functional test patterns are performed at these input levels. The majority of functional tests are performed at levels of 0V and 3V.
Note 3:
This is measured with a 0.1
m
F bypass capacitor between V
CC
and GND.
Note 4:
The low drive CMOS compatible V
OH
and V
OL
limits are not tested directly. Detailed device characterization validates that this specification can be
guaranteed by testing the high drive TTL compatible V
OL
and V
OH
specification.
38