參數(shù)資料
型號: 28F3204C3
廠商: Intel Corp.
英文描述: 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級堆芯片封裝存儲器)
中文描述: 3伏高級堆疊芯片級封裝存儲器(3V的高級堆芯片封裝存儲器)
文件頁數(shù): 34/62頁
文件大?。?/td> 538K
代理商: 28F3204C3
28F1602C3, 28F3204C3
E
34
PRODUCT PREVIEW
9.10
SRAM AC Characteristics
—Write Operations
(1, 2)
—Extended Temperature
Density
2/4 Mbit
Volt
2.7 V
–3.3 V
#
Sym
Parameter
Note
Min
Max
Unit
W1
t
WC
Write Cycle Time
70
ns
W2
t
AS
Address Setup to S-WE# (S-CS
1
#)
and S-UB#, S-LB# Going Low
4
0
ns
W3
t
WP
S-WE# (S-CS
1
#) Pulse Width
3
55
ns
W4
t
DW
Data to Write Time Overlap
30
ns
W5
t
AW
Address Setup to S-WE# (S-CS
1
#)
Going High
60
ns
W6
t
CW
S-CE# (S-WE#) Setup to S-WE#
(S-CS
1
#) Going High
60
ns
W7
t
DH
Data Hold Time from S-WE# (S-CS
1
#)
High
0
ns
W8
t
WR
Write Recovery
5
0
ns
W9
t
BW
S-UB#, S-LB# Setup to S-WE#
(S-CS
1
#) Going High
60
ns
NOTES:
1.
2.
See Figure 10, AC Waveform: SRAM Write Operations
A write occurs during the overlap (t
) of low S-CS
# and low S-WE#. A write begins when S-CS
# goes low and S-WE#
goes low with asserting S-UB# or S-LB# for single byte operation or simultaneously asserting S-UB# and S-LB# for double
byte operation. A write ends at the earliest transition when S-CS
1
# goes high and S-WE# goes high. The t
WP
is measured
from the beginning of write to the end of write.
t
WP
is measured from S-CS
1
# going low to end of write.
t
AS
is measured from the address valid to the beginning of write.
t
is measured from the end of write to the address change. t
WR
applied in case a write ends as S-CS
1
# or S-WE# going
high.
3.
4.
5.
相關(guān)PDF資料
PDF描述
28F1604C3 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器)
28F160C18 1.8V Advanced+ Boot Block Flash Memory(1.8V高級引導(dǎo)塊閃速存儲器)
28F160C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器)
28F800C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器)
28F160S3 3 V FlashFile Memory(3 V FlashFile 存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F3204W30 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
28F320B3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F320C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3)
28F320J3D75 制造商:undefined 功能描述:
28F320J5 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT