參數(shù)資料
型號: 28F3204C3
廠商: Intel Corp.
英文描述: 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級堆芯片封裝存儲器)
中文描述: 3伏高級堆疊芯片級封裝存儲器(3V的高級堆芯片封裝存儲器)
文件頁數(shù): 22/62頁
文件大?。?/td> 538K
代理商: 28F3204C3
28F1602C3, 28F3204C3
E
22
PRODUCT PREVIEW
9.4
DC Characteristics
(continued)
2.7 V
–3.3 V
Sym
Parameter
Device
Note
Typ
Max
Unit
Test Conditions
I
CCW
V
CC
Program Current
Flash
1,4
18
55
mA
F-V
PP
= V
PP1
Program in Progress
F-V
PP
=
V
PP2
(12 V)
Program in Progress
F-V
PP
=
V
PP1
Erase in Progress
F-V
PP
=
V
PP2
(12 V)
Erase in Progress
F-CE# = V
IH
, Erase Suspend
in Progress
8
15
mA
I
CCE
V
CC
Erase Current
Flash
1,4
16
45
mA
8
15
mA
I
CCES
V
Erase Suspend
Current
Flash
1,2,4
10
25
μA
I
CCWS
V
Program
Suspend Current
Flash
1,2,4
10
25
μA
F-CE# = V
IH
, Program
Suspend in Progress
F-RP# = GND ± 0.2 V
F-V
PP
V
CC1
I
PPD
F-V
Deep Power-
Down Current
Flash
1
0.2
5
μA
I
PPS
F-V
Standby
Current
Flash
1
0.2
5
μA
F-V
PP
V
CC1
I
PPR
F-V
PP
Read Current
Flash
1
2
±
15
μA
F-V
PP
V
CC1
1,4
50
200
μA
F-V
PP
V
CC1
F-V
PP
=V
PP1
Program in Progress
I
PPW
F-V
PP
Program
Current
Flash
1,4
0.05
0.1
mA
8
22
mA
F-V
PP
=
V
PP2
(12 V)
Program in Progress
I
PPE
F-V
PP
Erase Current
Flash
1,4
0.05
0.1
mA
F-V
PP
= V
PP1
Program in Progress
8
22
mA
F-V
PP
=
V
PP2
(12 V)
Program in Progress
I
PPES
F-V
Erase
Suspend Current
Flash
1,4
0.2
5
μA
F-V
= V
PP1
Erase Suspend in Progress
50
200
μA
F-V
PP
= V
PP2
(12 V)
Erase Suspend in Progress
I
PPWS
F-V
Program
Suspend Current
Flash
1,4
0.2
5
μA
F-V
PP
= V
PP1
Program Suspend in Progress
50
200
μA
F-V
= V
PP2
(12 V)
Program Suspend in Progress
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