參數(shù)資料
型號: 28F3204C3
廠商: Intel Corp.
英文描述: 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級堆芯片封裝存儲器)
中文描述: 3伏高級堆疊芯片級封裝存儲器(3V的高級堆芯片封裝存儲器)
文件頁數(shù): 26/62頁
文件大?。?/td> 538K
代理商: 28F3204C3
28F1602C3, 28F3204C3
E
26
PRODUCT PREVIEW
9.5
Flash AC Characteristics
—Read Operations
(1, 4)
—Extended Temperature,
(continued)
Density
32 Mbit
Product
–100
(5)
–110
Volt
3.0 V–3.3 V
2.7 V–3.3 V
3.0 V–3.3 V
2.7 V–3.3 V
#
Sym
Parameter
Note
Min
Max
Min
Max
Min
Max
Min
Max
Unit
R1
t
AVAV
Read Cycle Time
90
100
100
110
ns
R2
t
AVQV
Address to
Output Delay
90
100
100
110
ns
R3
t
ELQV
F-CE# to Output
Delay
2
90
100
100
110
ns
R4
t
GLQV
F-OE# to Output
Delay
2
30
30
30
30
ns
R5
t
PHQV
F-RP# to Output
Delay
150
150
150
150
ns
R6
t
ELQX
F-CE# to Output
in Low Z
3
0
0
0
0
ns
R7
t
GLQX
F-OE# to Output
in Low Z
3
0
0
0
0
ns
R8
t
EHQZ
F-CE# to Output
in High Z
3
20
20
20
20
ns
R9
t
GHQZ
F-OE# to Output
in High Z
3
20
20
20
20
ns
R10
t
OH
Output Hold from
Address, F-CE#,
or F-OE#
Change,
Whichever
Occurs First
3
0
0
0
0
ns
NOTES:
1.
2.
3.
4.
5.
See Figure 6 AC Waveform: Flash Read Operations.
F-OE# may be delayed up to t
ELQV
–t
GLQV
after the falling edge of F-CE# without impact on t
ELQV
.
Sampled, but not 100% tested.
See Figure 4, Input/Output Reference Waveform for timing measurements and maximum allowable input slew rate.
Speed bin not initially available.
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