參數(shù)資料
型號： MC916X1CTH16B1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 16.78 MHz, MICROCONTROLLER, PQFP120
封裝： QFP-120
文件頁數(shù)： 45/172頁
文件大?。?/td> 1200K
代理商： MC916X1CTH16B1
MC68HC916X1
MOTOROLA
MC68HC916X1TS/D
139
1.
Turn on VFPE2K (apply program/erase voltage to VFPE2K pin).
2.
Clear ERAS and set LAT and VFPE bits in BFECTL to set program mode, enable program-
ming address and data latches, and invoke special verification read circuitry. Set initial val-
ue of tppulse to tpmin.
3.
Write new data to the desired address. This causes the address and data of the location to
be programmed to be latched in the programming latches.
4.
Set ENPE to apply programming voltage.
5.
Delay long enough for one programming pulse to occur (tppulse).
6.
Clear ENPE to remove programming voltage.
7.
Delay while high voltage is turning off (tvprog).
8.
Read the location just programmed. If the value read is all zeros, proceed to step 9. If not,
calculate a new value for tppulse and repeat steps 4 through 7 until either the location is ver-
ified or the total programming time (tprogmax) has been exceeded. If tprogmax has been ex-
ceeded, the location may be bad and should not be used.
9.
If the location is programmed, calculate tpmargin and repeat steps 4 through 7. If the location
does not remain programmed, the location is bad.
10. Clear VFPE and LAT.
11. If there are more locations to program, repeat steps 2 through 10.
12. Turn off VFPE2K (reduce voltage on VFPE2K pin to VDD).
13. Read the entire array to verify that all locations are correct. If any locations are incorrect,
the array is bad.
10.5.4.2 Erasure Sequence
Use the following procedure to erase the BEFLASH. Refer to Figures 45 and 46 in 11 Electrical
Characteristics for VFPE to VDD relationships during erasure.
1.
Turn on VFPE2K (apply program/erase voltage to VFPE2K pin).
2.
Set initial value of tepulse to temin.
3.
Set LAT, VFPE, and ERAS bits to configure the BEFLASH module for erasure.
4.
Write to any valid address in the control block or array. This allows the erase voltage to be
turned on. The data written and the address written to are of no consequence.
5.
Set ENPE to apply programming voltage.
6.
Delay long enough for one erase pulse to occur (tepulse).
7.
Clear ENPE to remove programming voltage.
8.
Delay while high voltage is turning off (tverase).
9.
Clear LAT, ERAS, and VFPE to allow normal access to the BEFLASH.
10. Read the entire array and control block to ensure that the entire module is erased.
11. If all of the locations are not erased, calculate a new value for tepulse and repeat steps 3
through 10 until either the remaining locations are erased or the maximum erase time
(terasemax) has expired.
12. If all locations are erased, calculate temargin and repeat steps 3 through 10. If all locations
do not remain erased, the BEFLASH module may be bad.
13. Turn off VFPE2K (reduce voltage on VFPE2K pin to VDD).
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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