參數(shù)資料
型號： M30L0R8000B0ZAQE
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
封裝： 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
文件頁數(shù)： 81/83頁
文件大?。?/td> 1569K
代理商： M30L0R8000B0ZAQE
Obsolete
Product(s)
- Obsolete
M30L0R8000T0, M30L0R8000B0
82/83
REVISION HISTORY
Table 50. Document Revision History
Date
Version
Revision Details
24-Nov-2003
0.1
First Issue.
27-Apr-2004
0.2
70ns speed class added, maximum operating frequency increased to 66MHz. Dual
operation limitations added (Table 15.). Read CFI Query Command clarified. Write to
Buffer and Program command renamed Buffer Program.
Ambient temperature conditions modified during Buffer Enhanced Factory Program
modified. IDD1 (for f=54MHz), IDD2, IDD3 and IDD4, IDD6 and IDD7 parameters modified
and IDD1 (for f=66MHz) added in Table 21., DC Characteristics - Currents.
Package specifications updated in Table 28., TFBGA88 8x10mm - 8x10 ball array,
Data and/or values modified at address offsets 027h, 02Dh, 02Fh, 021h and 033h in
Table 39., Device Geometry Definition. Note 2 to Tables 43, 44 and 45 clarified.
Small text changes.
21-Oct-2004
0.3
Lead-free packages are compliant with the ST ECOPACK specification.
Table 11., Configuration Register modified. AC waveforms simplified.
70ns speed class removed, operating frequency 66MHz removed.
Daisy chain information removed.
28-Jan-2005
1.0
VPP is 12V tolerant (VPP max changed in Table 18., Absolute Maximum Ratings).
INTERFACE STATE TABLES revised. Alt symbol to tAVWH and tAVEH removed from
18-May-2005
2.0
Device changed from PRELIMINARY DATA TO full Datasheet.
tWHQV AC parameter removed throughout the document.
VPP clarified for enabling program and erase operations in VPP Program Supply
Voltage, page 11 . Clarification of device behavior when block is protected for all
Program commands in the COMMAND INTERFACE section.
Wait at Boundary table replaced by X-Latency Bits (CR13-CR11), page 27.
VLKO modified in Table 22., DC Characteristics - Voltages. AC parameter values
tEHQX, tEHQZ, tGHQX, tGHQZ and tGHTZ modified in Table 23., Asynchronous Read AC
相關(guān)PDF資料
PDF描述
M30L0T8000B0ZAQE 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
M31002AMLJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, LVDS OUTPUT
M31016AUMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
M31002AGMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
M31002BMMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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