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參數(shù)資料
| 型號： | M30L0R8000B0ZAQE |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 |
| 封裝： | 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 |
| 文件頁數(shù)： | 36/83頁 |
| 文件大?。?/td> | 1569K |
| 代理商： | M30L0R8000B0ZAQE |
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Obsolete
Product(s)
- Obsolete
Product(s)
41/83
M30L0R8000T0, M30L0R8000B0
Table 21. DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. VDD Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VDDQ
±1
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VDDQ
±1
A
IDD1
Supply Current
Asynchronous Read (f=5MHz)
E = VIL, G = VIH
13
15
mA
Supply Current
Synchronous Read (f=54MHz)
4 Word
16
18
mA
8 Word
18
20
mA
16 Word
23
25
mA
Continuous
25
27
mA
IDD2
Supply Current
(Reset)
RP = VSS ± 0.2V
50
110
A
IDD3
Supply Current (Standby)
E = VDDQ ± 0.2V
K=Vss
50
110
A
IDD4
Supply Current (Automatic Standby)
E = VIL, G = VIH
50
110
A
IDD5
(1)
Supply Current (Program)
VPP = VPPH
820
mA
VPP = VDD
10
25
mA
Supply Current (Erase)
VPP = VPPH
820
mA
VPP = VDD
10
25
mA
IDD6
(1,2)
Supply Current
(Dual Operations)
Program/Erase in one Bank,
Asynchronous Read in another
Bank
23
40
mA
Program/Erase in one Bank,
Synchronous Read (Continuous
f=54MHz) in another Bank
35
52
mA
IDD7
(1)
Supply Current Program/ Erase
Suspended (Standby)
E = VDDQ ± 0.2V
K=Vss
50
110
A
IPP1
(1)
VPP Supply Current (Program)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
A
VPP Supply Current (Erase)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
A
IPP2
VPP Supply Current (Read)
VPP ≤ VDD
0.2
5
A
IPP3
(1)
VPP Supply Current (Standby)
VPP ≤ VDD
0.2
5
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0T8000B0ZAQE | 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 |
| M31002AMLJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, LVDS OUTPUT |
| M31016AUMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
| M31002AGMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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