參數(shù)資料
型號： M30L0R8000B0ZAQE
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
封裝： 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
文件頁數(shù)： 58/83頁
文件大?。?/td> 1569K
代理商： M30L0R8000B0ZAQE
Obsolete
Product(s)
- Obsolete
Product(s)
61/83
M30L0R8000T0, M30L0R8000B0
Table 38. CFI Query System Interface Information
Offset
Data
Description
Value
01Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
1.7V
01Ch
0020h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
2V
01Dh
0085h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
8.5V
01Eh
0095h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
9.5V
01Fh
0008h
Typical time-out per single byte/word program = 2n s
256s
020h
0009h
Typical time-out for Buffer Program = 2n s
512s
021h
000Ah
Typical time-out per individual block erase = 2n ms
1s
022h
0000h
Typical time-out for full chip erase = 2n ms
NA
023h
0001h
Maximum time-out for word program = 2n times typical
512s
024h
0001h
Maximum time-out for Buffer Program = 2n times typical
1024s
025h
0002h
Maximum time-out per individual block erase = 2n times typical
4s
026h
0000h
Maximum time-out for chip erase = 2n times typical
NA
相關(guān)PDF資料
PDF描述
M30L0T8000B0ZAQE 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
M31002AMLJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, LVDS OUTPUT
M31016AUMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
M31002AGMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
M31002BMMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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