參數(shù)資料
型號： M30L0R8000B0ZAQE
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
封裝： 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
文件頁數(shù)： 61/83頁
文件大?。?/td> 1569K
代理商： M30L0R8000B0ZAQE
Obsolete
Product(s)
- Obsolete
Product(s)
M30L0R8000T0, M30L0R8000B0
64/83
Table 41. Protection Register Information
Offset
Data
Description
Value
(P+E)h = 118h
0002h
Number of protection register fields in JEDEC ID space. 0000h indicates
that 256 fields are available.
2
(P+F)h = 119h
0080h
Protection Field 1: Protection Description
Bits 0-7 Lower byte of protection register address
Bits 8-15 Upper byte of protection register address
Bits 16-23 2n bytes in factory pre-programmed region
Bits 24-31 2n bytes in user programmable region
80h
(P+10)h = 11Ah
0000h
00h
(P+ 11)h = 11Bh
0003h
8 Bytes
(P+12)h = 11Ch
0003h
8 Bytes
(P+13)h = 11Dh
0089h
Protection Register 2: Protection Description
Bits 0-31 protection register address
Bits 32-39 n number of factory programmed regions (lower byte)
Bits 40-47 n number of factory programmed regions (upper byte)
Bits 48-55 2n bytes in factory programmable region
Bits 56-63 n number of user programmable regions (lower byte)
Bits 64-71 n number of user programmable regions (upper byte)
Bits 72-79 2n bytes in user programmable region
89h
(P+14)h = 11Eh
0000h
00h
(P+15)h = 11Fh
0000h
00h
(P+16)h = 120h
0000h
00h
(P+17)h = 121h
0000h
0
(P+18)h = 122h
0000h
0
(P+19)h = 123h
0000h
0
(P+1A)h = 124h
0010h
16
(P+1B)h = 125h
0000h
0
(P+1C)h = 126h
0004h
16
相關(guān)PDF資料
PDF描述
M30L0T8000B0ZAQE 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
M31002AMLJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, LVDS OUTPUT
M31016AUMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
M31002AGMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
M31002BMMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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