參數(shù)資料
型號： M30L0R8000B0ZAQE
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
封裝： 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
文件頁數(shù)： 47/83頁
文件大?。?/td> 1569K
代理商： M30L0R8000B0ZAQE
Obsolete
Product(s)
- Obsolete
Product(s)
51/83
M30L0R8000T0, M30L0R8000B0
Table 25. Write AC Characteristics, Write Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. tWHEL has this value when reading in the targeted bank or when reading following a Set Configuration Register command. System
designers should take this into account and may insert a software No-Op instruction to delay the first read in the same bank after
issuing any command and to delay the first read to any address after issuing a Set Configuration Register command. If the first read
after the command is a Read Array operation in a different bank and no changes to the Configuration Register have been issued,
tWHEL is 0ns.
3. Meaningful only if L is always kept low.
Symbol
Alt
Parameter
M30L0R8000T0/B
Unit
85
Write
Enab
le
Con
trolle
d
T
imin
g
s
tAVAV
tWC
Address Valid to Next Address Valid
Min
85
ns
tAVLH
Address Valid to Latch Enable High
Min
7
ns
tAVWH
(3)
Address Valid to Write Enable High
Min
45
ns
tDVWH
tDS
Data Valid to Write Enable High
Min
45
ns
tELLH
Chip Enable Low to Latch Enable High
Min
10
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
Min
0
ns
tELQV
Chip Enable Low to Output Valid
Min
85
ns
tELKV
Chip Enable High to Clock Valid
Min
7
ns
tGHWL
Output Enable High to Write Enable Low
Min
17
ns
tLHAX
Latch Enable High to Address Transition
Min
7
ns
tLLLH
Latch Enable Pulse Width
Min
7
ns
tWHAV
(3)
Write Enable High to Address Valid
Min
0
ns
tWHAX
(3)
tAH
Write Enable High to Address Transition
Min
0
ns
tWHDX
tDH
Write Enable High to Input Transition
Min
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
Min
0
ns
tWHEL
(2)
Write Enable High to Chip Enable Low
Min
20
ns
tWHGL
Write Enable High to Output Enable Low
Min
0
ns
tWHLL
Write Enable High to Latch Enable Low
Min
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
Min
20
ns
tWLWH
tWP
Write Enable Low to Write Enable High
Min
45
ns
P
rot
e
c
ti
on
T
im
ing
s
tQVVPL
Output (Status Register) Valid to VPP Low
Min
0
ns
tQVWPL
Output (Status Register) Valid to Write Protect Low
Min
0
ns
tVPHWH
tVPS
VPP High to Write Enable High
Min
200
ns
tWHVPL
Write Enable High to VPP Low
Min
200
ns
tWHWPL
Write Enable High to Write Protect Low
Min
200
ns
tWPHWH
Write Protect High to Write Enable High
Min
200
ns
相關(guān)PDF資料
PDF描述
M30L0T8000B0ZAQE 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
M31002AMLJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, LVDS OUTPUT
M31016AUMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
M31002AGMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
M31002BMMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*