參數(shù)資料
型號: M30L0R8000B0ZAQE
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
封裝: 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
文件頁數(shù): 37/83頁
文件大?。?/td> 1569K
代理商: M30L0R8000B0ZAQE
Obsolete
Product(s)
- Obsolete
Product(s)
M30L0R8000T0, M30L0R8000B0
42/83
Table 22. DC Characteristics - Voltages
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
VIL
Input Low Voltage
0
0.4
V
VIH
Input High Voltage
VDDQ –0.4
VDDQ + 0.4
V
VOL
Output Low Voltage
IOL = 100A
0.1
V
VOH
Output High Voltage
IOH = –100A
VDDQ –0.1
V
VPP1
VPP Program Voltage-Logic
Program, Erase
1.3
1.8
3.3
V
VPPH
VPP Program Voltage Factory
Program, Erase
8.5
9.0
9.5
V
VPPLK
Program or Erase Lockout
0.4
V
VLKO
VDD Lock Voltage
1V
VRPH
RP pin Extended High Voltage
3.3
V
相關PDF資料
PDF描述
M30L0T8000B0ZAQE 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
M31002AMLJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, LVDS OUTPUT
M31016AUMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
M31002AGMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
M31002BMMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
相關代理商/技術參數(shù)
參數(shù)描述
M30L0R8000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory