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參數(shù)資料
| 型號： | M30L0R8000B0ZAQE |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 |
| 封裝： | 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 |
| 文件頁數(shù)： | 1/83頁 |
| 文件大?。?/td> | 1569K |
| 代理商： | M30L0R8000B0ZAQE |
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May 2005
M30L0R8000T0
M30L0R8000B0
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst)
1.8V Supply Flash Memory
FEATURES SUMMARY
■
SUPPLY VOLTAGE
–VDD = 1.7V to 2.0V for program, erase and
read
–VDDQ = 1.7V to 2.0V for I/O Buffers
–VPP = 9V for fast program (12V tolerant)
■
SYNCHRONOUS / ASYNCHRONOUS READ
–
Synchronous Burst Read mode:
54MHz
–
Asynchronous Page Read mode
–
Random Access: 85ns
■
SYNCHRONOUS BURST READ SUSPEND
■
PROGRAMMING TIME
–
10s typical Word program time using
Buffer Enhanced Factory Program
command
■
MEMORY ORGANIZATION
–
Multiple Bank Memory Array: 16 Mbit
Banks
–
Parameter Blocks (Top or Bottom
location)
■
DUAL OPERATIONS
–
program/erase in one Bank while read in
others
–
No delay between read and write
operations
■
BLOCK LOCKING
–
All blocks locked at power-up
–
Any combination of blocks can be locked
with zero latency
–WP for Block Lock-Down
–
Absolute Write Protection with VPP = VSS
■
SECURITY
–
64 bit unique device number
–
2112 bit user programmable OTP Cells
■
COMMON FLASH INTERFACE (CFI)
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
■
ELECTRONIC SIGNATURE
–
Manufacturer Code: 20h
–
Top Device Code,
M30L0R8000T0: 880Dh.
–
Bottom Device Code,
M30L0R8000B0: 880Eh.
■
PACKAGE
–
Compliant with Lead-Free Soldering
Processes
–
Lead-Free Versions
TFBGA88 (ZAQ) 8 x 10mm
FBGA
Obsolete
Product(s)
- Obsolete
Product(s)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0T8000B0ZAQE | 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 |
| M31002AMLJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, LVDS OUTPUT |
| M31016AUMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
| M31002AGMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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