參數(shù)資料
型號： M30L0T8000B0ZAQE
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
封裝： 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, BGA-88
文件頁數(shù)： 1/103頁
文件大?。?/td> 794K
代理商： M30L0T8000B0ZAQE
February 2006
Rev. 1
1
M30L0T8000T0
M30L0T8000B0
256 Mbit (x16, Multiple Bank, Multi-Level, Burst)
1.8V core, 3V I/O Flash memory
Feature summary
■
Supply voltage
–VDD = 1.7V to 2.0V for program, erase and
read
–VDDQ = 2.2V to 3.6V for I/O Buffers
–VPP = 9V for fast program (12V tolerant)
■
Synchronous / asynchronous read
– Synchronous Burst Read mode:
52MHz
– Asynchronous Page Read mode
– Random Access: 85ns
■
Synchronous burst read suspend
■
Programming time
– 10s typical Word program time using
Buffer Enhanced Factory Program
command
■
Memory organization
– Multiple Bank Memory Array: 16 Mbit
Banks
– Parameter Blocks (Top or Bottom location)
■
Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
■
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
–WP for Block Lock-Down
– Absolute Write Protection with VPP = VSS
■
Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
■
Common Flash Interface (CFI)
■
100,000 program/erase cycles per block
■
Electronic signature
– Manufacturer Code: 20h
– Top Device Code,
M30L0T8000T0: 880Dh.
– Bottom Device Code,
M30L0T8000B0: 880Eh.
■
Package
– ECOPACK
LFBGA88 (ZAQ) 8 x 10mm
FBGA
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