參數(shù)資料
型號： M30L0T8000B0ZAQE
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
封裝： 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, BGA-88
文件頁數(shù)： 51/103頁
文件大小： 794K
代理商： M30L0T8000B0ZAQE
M30L0T8000T0, M30L0T8000B0
Program and erase times and endurance cycles
51/103
10
Program and erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in Table 17 Exact erase times may change depending on the memory array
condition. The best case is when all the bits in the block are at ‘0’ (pre-programmed). The
worst case is when all the bits in the block are at ‘1’ (not preprogrammed). Usually, the
system overhead is negligible with respect to the erase time. In the M30L0T8000T0/B0 the
maximum number of Program/Erase cycles depends on the VPP voltage supply used.
Table 17.
Program/Erase Times and Endurance Cycles(1)
Parameter
Condition(2)
Min
Typ
Typical after
100kW/E Cycles
Max
Unit
V
PP
=
V
DD
Erase
Parameter Block (16 KWord)
0.4
1
2.5
s
Main Block (64
KWord)
Preprogrammed
1
3
4
s
Not Preprogrammed
1.2
4
s
Program(3)
SIngle Cell
Word Program
30
60
s
Buffer Program
30
60
s
Single Word
Word Program
85
180
s
Buffer Program
85
180
s
Buffer (32 Words) (Buffer Program)
440
880
s
Main Block (64 KWord) (Buffer Program)
880
ms
Suspend Latency
Program
20
25
s
Erase
20
25
s
Program/Erase
Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
V
PP
=
V
PPH
Erase
Parameter Block (16 KWord)
0.4
2.5
s
Main Block (64 KWord)
1
4
s
Program(3)
Single Word
Word Program
85
170
s
Buffer Enhanced Factory
Program(4)
10
s
Buffer (32
Words)
Buffer Program
340
680
s
Buffer Enhanced Factory
Program
320
s
Main Block (64
KWords)
Buffer Program
640
ms
Buffer Enhanced Factory
Program
640
ms
Bank (16
Mbits)
Buffer Program
10
s
Buffer Enhanced Factory
Program
10
s
Program/Erase
Cycles (per Block)
Main Blocks
1000 cycles
Parameter Blocks
2500 cycles
1.
Values are liable to change with the external system-level overhead (command sequence and Status Register polling
execution).
2.
TA = –25 to 85°C; VDD = 1.7V to 2V; VDDQ 2.2V to 3.6V.
3.
Excludes the time needed to execute the command sequence.
4.
This is an average value on the entire device.
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