參數(shù)資料
型號: M30L0T8000B0ZAQE
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
封裝: 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, BGA-88
文件頁數(shù): 80/103頁
文件大小: 794K
代理商: M30L0T8000B0ZAQE
Common Flash Interface
M30L0T8000T0, M30L0T8000B0
Table 39.
Device Geometry Definition
Offset
Data
Description
Value
027h
0019h
Device Size = 2n in number of bytes
32 MBytes
028h
029h
0001h
0000h
Flash Device Interface Code description
x16
Async.
02Ah
02Bh
0006h
0000h
Maximum number of bytes in multi-byte program or page = 2n
64 Bytes
02Ch
0002h
Number of identical sized erase block regions within the device
bit 7 to 0 = x = number of Erase Block Regions
2
T
O
P
DEVICES
02Dh
02Eh
00FEh
0000h
Erase Block Region 1 Information
Number of identical-size erase blocks = 00FEh+1
255
02Fh
030h
0000h
0002h
Erase Block Region 1 Information
Block size in Region 1 = 0200h * 256 Byte
128 KByte
031h
032h
0003h
0000h
Erase Block Region 2 Information
Number of identical-size erase blocks = 0003h+1
4
033h
034h
0080h
0000h
Erase Block Region 2 Information
Block size in Region 2 = 0080h * 256 Byte
32 KByte
035h
038h
Reserved Reserved for future erase block region information
NA
BO
TT
OM
DEVICES
02Dh
02Eh
0003h
0000h
Erase Block Region 1 Information
Number of identical-size erase block = 0003h+1
4
02Fh
030h
0080h
0000h
Erase Block Region 1 Information
Block size in Region 1 = 0080h * 256 bytes
32 KBytes
031h
032h
00FEh
0000h
Erase Block Region 2 Information
Number of identical-size erase block = 00FEh+1
255
033h
034h
0000h
0002h
Erase Block Region 2 Information
Block size in Region 2 = 0200h * 256 bytes
128
KBytes
035h
038h
Reserved Reserved for future erase block region information
NA
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