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參數(shù)資料
| 型號： | M30L0T8000B0ZAQE |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 |
| 封裝： | 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, BGA-88 |
| 文件頁數(shù)： | 18/103頁 |
| 文件大?。?/td> | 794K |
| 代理商： | M30L0T8000B0ZAQE |
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M30L0T8000T0, M30L0T8000B0
Command interface
21/103
4.7
Program Command
The program command is used to program a single Word to the memory array.
If the block is protected, then the Program Command operation will abort. The data in the
block will not be changed as a result and the Status Register will output the error.
Two Bus Write cycles are required to issue the Program Command.
●
The first bus cycle sets up the Program command.
●
The second latches the address and data to be programmed and starts the
Program/Erase Controller.
Once the programming has started, read operations in the bank being programmed output
the Status Register content.
During a Program operation, the bank containing the Word being programmed will only
accept the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query
and the Program/Erase Suspend command, all other commands will be ignored. A Read
Array command is required to return the bank to Read Array mode.
Refer to Dual Operations section for detailed information about simultaneous operations
allowed in banks not being programmed.
Typical Program times are given in Table 17: Program/Erase Times and Endurance Cycles.
The Program operation aborts if Reset, RP, goes to VIL. As data integrity cannot be
guaranteed when the Program operation is aborted, the Word must be reprogrammed.
See Appendix C, Figure 18: Program Flowchart and Pseudo Code, for the flowchart for
using the Program command.
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