參數(shù)資料
型號： M30L0T8000B0ZAQE
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
封裝： 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, BGA-88
文件頁數(shù)： 94/103頁
文件大?。?/td> 794K
代理商： M30L0T8000B0ZAQE
Flowcharts and pseudo codes
M30L0T8000T0, M30L0T8000B0
Figure 22.
Erase Suspend & Resume Flowchart and Pseudo Code
1.
The Read Status Register command (Write 70h) can be issued just before or just after the Erase Resume command.
Write 70h
AI10116b
Read Status
Register
YES
NO
SR7 = 1
YES
NO
SR6 = 1
Erase Continues with
Bank in Read Status
Register Mode
Write D0h
Read data from another block
or
Program/Protection Register Program
or
Block Lock/Unlock/Lock-Down
Start
Write B0h
Erase Complete
Write FFh
Read Data
Write FFh
erase_suspend_command ( ) {
writeToFlash (bank_address, 0xB0) ;
writeToFlash (bank_address, 0x70) ;
/* read status register to check if
erase has already completed */
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR6==0) /*erase completed */
{ writeToFlash (bank_address, 0xFF) ;
read_data ( ) ;
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
}
else
{ writeToFlash (bank_address, 0xFF) ;
read_program_data ( );
/*read or program data from another block*/
writeToFlash (bank_address, 0xD0) ;
/*write 0xD0 to resume erase*/
writeToFlash (bank_address, 0x70) ;
/*read status register to check if erase has completed */
}
Write 70h(1)
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