參數(shù)資料
型號： M30L0T8000B0ZAQE
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
封裝： 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, BGA-88
文件頁數(shù)： 55/103頁
文件大?。?/td> 794K
代理商： M30L0T8000B0ZAQE
M30L0T8000T0, M30L0T8000B0
DC and AC parameters
55/103
Table 21.
DC Characteristics - Currents
Symbol
Parameter
Test Condition
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤V
IN ≤VDDQ
±1
A
ILO
Output Leakage Current
0V
≤V
OUT ≤VDDQ
±1
A
IDD1
Supply Current
Asynchronous Read (f=5MHz)
E = VIL, G = VIH
14
16
mA
Supply Current
Synchronous Read (f=40MHz)
4 Word
13
17
mA
8 Word
15
19
mA
16 Word
17
21
mA
Continuous
21
26
mA
Supply Current
Synchronous Read (f = 52MHz)
4 Word
16
19
mA
8 Word
19
23
mA
16 Word
22
26
mA
Continuous
23
28
mA
IDD2
Supply Current (Reset)
RP = VSS ± 0.2V
50
110
A
IDD3
Supply Current (Standby)
E = VDDQ ± 0.2V
K=VSS
50
110
A
IDD4
Supply Current (Automatic
Standby)
E = VIL, G = VIH
50
110
A
IDD5
(1)
1.
Sampled only, not 100% tested.
Supply Current (Program)
VPP = VPPH
820
mA
VPP = VDD
10
25
mA
Supply Current (Erase)
VPP = VPPH
820
mA
VPP = VDD
10
25
mA
IDD6
(1),(2)
2.
VDD Dual Operation current is the sum of read and program or erase currents.
Supply Current
(Dual Operations)
Program/Erase in one Bank,
Asynchronous Read in
another Bank
24
41
mA
Program/Erase in one Bank,
Synchronous Read
(Continuous f=52MHz) in
another Bank
33
53
mA
IDD7
(1)
Supply Current Program/ Erase
Suspended (Standby)
E = VDDQ ± 0.2V, K=VSS
50
110
A
IPP1
(1)
VPP Supply Current (Program)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
A
VPP Supply Current (Erase)
VPP = VPPH
25
mA
VPP = VDD
0.2
5
A
IPP2
VPP Supply Current (Read)
VPP ≤VDD
0.2
5
A
IPP3
(1)
VPP Supply Current (Standby)
VPP ≤VDD
0.2
5
A
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