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參數(shù)資料
| 型號(hào)： | M30L0R8000B0ZAQE |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 |
| 封裝： | 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 |
| 文件頁數(shù)： | 18/83頁 |
| 文件大?。?/td> | 1569K |
| 代理商： | M30L0R8000B0ZAQE |
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Obsolete
Product(s)
- Obsolete
Product(s)
25/83
M30L0R8000T0, M30L0R8000B0
Once set High, the VPP Status bit must be set Low
by a Clear Status Register command or a hard-
ware reset before a new program or erase com-
mand is issued, otherwise the new command will
appear to fail.
Program Suspend Status Bit (SR2). The
Pro-
gram Suspend Status bit indicates that a program
operation has been suspended in the addressed
block. The Program Suspend Status bit should
only be considered valid when the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
When the Program Suspend Status bit is High (set
to ‘1’), a Program/Erase Suspend command has
been issued and the memory is waiting for a Pro-
gram/Erase Resume command.
SR2 is set within the Program Suspend Latency
time of the Program/Erase Suspend command be-
ing issued therefore the memory may still com-
plete the operation rather than entering the
Suspend mode.
When a Program/Erase Resume command is is-
sued the Program Suspend Status bit returns Low.
Block Protection Status Bit (SR1). The
Block
Protection Status bit is used to identify if a Pro-
gram or Block Erase operation has tried to modify
the contents of a locked block.
When the Block Protection Status bit is High (set
to ‘1’), a program or erase operation has been at-
tempted on a locked block.
Once set High, the Block Protection Status bit
must be set Low by a Clear Status Register com-
mand or a hardware reset before a new program
or erase command is issued, otherwise the new
command will appear to fail.
Bank Write/Multiple Word Program Status Bit
(SR0). The Bank Write Status bit indicates wheth-
er the addressed bank is programming or erasing.
In Buffer Enhanced Factory Program mode the
Multiple Word Program bit shows if the device is
ready to accept a new Word to be programmed to
the memory array.
The Bank Write Status bit should only be consid-
ered valid when the Program/Erase Controller Sta-
tus SR7 is Low (set to ‘0’).
When both the Program/Erase Controller Status bit
and the Bank Write Status bit are Low (set to ‘0’),
the addressed bank is executing a program or
erase operation. When the Program/Erase Con-
troller Status bit is Low (set to ‘0’) and the Bank
Write Status bit is High (set to ‘1’), a program or
erase operation is being executed in a bank other
than the one being addressed.
In Buffer Enhanced Factory Program mode if Mul-
tiple Word Program Status bit is Low (set to ‘0’),
the device is ready for the next Word, if the Multi-
ple Word Program Status bit is High (set to ‘1’) the
device is not ready for the next Word.
For further details on how to use the Status Regis-
ter, see the Flowcharts and Pseudo codes provid-
ed in APPENDIX C.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0T8000B0ZAQE | 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 |
| M31002AMLJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, LVDS OUTPUT |
| M31016AUMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
| M31002AGMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
| M31002BMMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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