- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296349 > M30L0R8000B0ZAQE (STMICROELECTRONICS) 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 PDF資料下載
參數(shù)資料
| 型號(hào)： | M30L0R8000B0ZAQE |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 |
| 封裝： | 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 |
| 文件頁(yè)數(shù)： | 68/83頁(yè) |
| 文件大小： | 1569K |
| 代理商： | M30L0R8000B0ZAQE |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)當(dāng)前第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)
Obsolete
Product(s)
- Obsolete
Product(s)
M30L0R8000T0, M30L0R8000B0
70/83
Figure 21. Buffer Program Flowchart and Pseudo Code
Note: 1. n + 1 is the number of data being programmed.
2. Next Program data is an element belonging to buffer_Program[].data; Next Program address is an element belonging to
buffer_Program[].address
3. Routine for Error Check by reading SR3, SR4 and SR1.
Buffer Program E8h
Command,
Start Address
AI08913b
Start
Write Buffer Data,
Start Address
YES
X = n
End
NO
Write n(1),
Start Address
X = 0
Write Next Buffer Data,
Next Program Address
X = X + 1
Program
Buffer to Flash
Confirm D0h
Read Status
Register
NO
SR7 = 1
YES
Full Status
Register Check(3)
(2)
Read Status
Register
NO
SR7 = 1
YES
Buffer_Program_command (Start_Address, n, buffer_Program[] )
/* buffer_Program [] is an array structure used to store the address and
data to be programmed to the Flash memory (the address must be within
the segment Start Address and Start Address+n) */
{
do {writeToFlash (Start_Address, 0xE8) ;
status_register=readFlash (Start_Address);
} while (status_register.SR7==0);
writeToFlash (Start_Address, n);
writeToFlash (buffer_Program[0].address, buffer_Program[0].data);
/*buffer_Program[0].address is the start address*/
x = 0;
while (x<n)
{ writeToFlash (buffer_Program[x+1].address, buffer_Program[x+1].data)
x++;
}
writeToFlash (Start_Address, 0xD0);
do {status_register=readFlash (Start_Address);
} while (status_register.SR7==0);
full_status_register_check();
}
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0T8000B0ZAQE | 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 |
| M31002AMLJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, LVDS OUTPUT |
| M31016AUMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
| M31002AGMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
| M31002BMMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。