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參數(shù)資料
| 型號： | M30L0R8000B0ZAQE |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 |
| 封裝： | 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 |
| 文件頁數(shù)： | 63/83頁 |
| 文件大?。?/td> | 1569K |
| 代理商： | M30L0R8000B0ZAQE |
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Obsolete
Product(s)
- Obsolete
Product(s)
M30L0R8000T0, M30L0R8000B0
66/83
Table 44. Bank and Erase Block Region 1 Information
Flash memory (top)
Flash memory (bottom)
Description
Offset
Data
Offset
Data
(P+24)h = 12Eh
0Fh
(P+24)h = 12Eh
01h
Number of identical banks within Bank Region 1
(P+25)h = 12Fh
00h
(P+25)h = 12Fh
00h
(P+26)h = 130h
11h
(P+26)h = 130h
11h
Number of program or erase operations allowed in Bank
Region 1:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+27)h = 131h
00h
(P+27)h = 131h
00h
Number of program or erase operations allowed in other banks
while a bank in same region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+28)h = 132h
00h
(P+28)h = 132h
00h
Number of program or erase operations allowed in other banks
while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+29)h = 133h
01h
(P+29)h = 133h
02h
Types of erase block regions in Bank Region 1
n = number of erase block regions with contiguous same-size
erase blocks.
Symmetrically blocked banks have one blocking region(2).
(P+2A)h = 134h
0Fh
(P+2A)h = 134h
03h
Bank Region 1 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks in each
bank
Bits 16-31: n×256 = number of bytes in erase block region
(P+2B)h = 135h
00h
(P+2B)h = 135h
00h
(P+2C)h = 136h
00h
(P+2C)h = 136h
80h
(P+2D)h = 137h
02h
(P+2D)h = 137h
00h
(P+2E)h = 138h
64h
(P+2E)h = 138h
64h
Bank Region 1 (Erase Block Type 1)
Minimum block erase cycles × 1000
(P+2F)h = 139h
00h
(P+2F)h = 139h
00h
(P+30)h = 13Ah
02h
(P+30)h = 13Ah
02h
Bank Region 1 (Erase Block Type 1): BIts per cell, internal ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
(P+31)h = 13Bh
03h
(P+31)h = 13Bh
03h
Bank Region 1 (Erase Block Type 1): Page mode and
Synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(P+32)h = 13Ch
0Eh
Bank Region 1 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized erase blocks in each
bank
Bits 16-31: n×256 = number of bytes in erase block region
(P+33)h = 13Dh
00h
(P+34)h = 13Eh
00h
(P+35)h = 13Fh
02h
(P+36)h = 140h
64h
Bank Region 1 (Erase Block Type 2)
Minimum block erase cycles × 1000
(P+37)h = 141h
00h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0T8000B0ZAQE | 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 |
| M31002AMLJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, LVDS OUTPUT |
| M31016AUMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
| M31002AGMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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