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參數(shù)資料
| 型號： | M30L0R8000B0ZAQE |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 |
| 封裝： | 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 |
| 文件頁數(shù)： | 60/83頁 |
| 文件大?。?/td> | 1569K |
| 代理商： | M30L0R8000B0ZAQE |
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Obsolete
Product(s)
- Obsolete
Product(s)
63/83
M30L0R8000T0, M30L0R8000B0
Table 40. Primary Algorithm-Specific Extended Query Table
Offset
Data
Description
Value
(P)h = 10Ah
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
0052h
"R"
0049h
"I"
(P+3)h =10Dh
0031h
Major version number, ASCII
"1"
(P+4)h = 10Eh
0033h
Minor version number, ASCII
"3"
(P+5)h = 10Fh
00E6h
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
bit 0 Chip Erase supported(1 = Yes, 0 = No)
bit 1 Erase Suspend supported(1 = Yes, 0 = No)
bit 2 Program Suspend supported(1 = Yes, 0 = No)
bit 3 Legacy Lock/Unlock supported(1 = Yes, 0 = No)
bit 4 Queued Erase supported(1 = Yes, 0 = No)
bit 5 Instant individual block locking supported(1 = Yes, 0 = No)
bit 6 Protection bits supported(1 = Yes, 0 = No)
bit 7 Page mode read supported(1 = Yes, 0 = No)
bit 8 Synchronous read supported(1 = Yes, 0 = No)
bit 9 Simultaneous operation supported(1 = Yes, 0 = No)
bit 10 to 31 Reserved; undefined bits are ‘0’. If bit 31 is ’1’ then another 31
bit field of optional features follows at the end of the bit-30
field.
No
Yes
No
Yes
0003h
(P+7)h = 111h
0000h
(P+8)h = 112h
0000h
(P+9)h = 113h
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query
bit 0 Program supported after Erase Suspend (1 = Yes, 0 = No)
bit 7 to 1 Reserved; undefined bits are ‘0’
Yes
(P+A)h = 114h
0003h
Block Protect Status
Defines which bits in the Block Status Register section of the Query are
implemented.
bit 0 Block protect Status Register Lock/Unlock
bit active (1 = Yes, 0 = No)
bit 1 Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2 Reserved for future use; undefined bits are ‘0’
Yes
(P+B)h = 115h
0000h
(P+C)h = 116h
0018h
VDD Logic Supply Optimum Program/Erase voltage (highest performance)
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
1.8V
(P+D)h = 117h
0090h
VPP Supply Optimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
9V
相關PDF資料 |
PDF描述 |
|---|---|
| M30L0T8000B0ZAQE | 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88 |
| M31002AMLJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, LVDS OUTPUT |
| M31016AUMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
| M31002AGMJ1000.000000MHZ | VCXO, CLOCK, 1000 MHz, CMOS OUTPUT |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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