參數(shù)資料
型號： M30L0R8000B0ZAQE
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
封裝： 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
文件頁數(shù)： 76/83頁
文件大小： 1569K
代理商： M30L0R8000B0ZAQE
Obsolete
Product(s)
- Obsolete
Product(s)
M30L0R8000T0, M30L0R8000B0
78/83
Note: 1. CI = Command Interface, CR = Configuration Register, BEFP = Buffer Enhanced Factory Program, P/E. C. = Program/Erase Con-
troller.
2. At Power-Up, all banks are in Read Array mode. Issuing a Read Array command to a busy bank, results in undetermined data out-
put.
3. The two cycle command should be issued to the same bank address.
4. If the P/E.C. is active, both cycles are ignored.
5. The Clear Status Register command clears the Status Register error bits except when the P/E.C. is busy or suspended.
6. BEFP is allowed only when Status Register bit SR0 is set to ‘0’. BEFP is busy if Block Address is first BEFP Address. Any other
commands are treated as data.
Buffer
Program
in Erase
Suspend
Setup
Buffer Program Load 1 in Erase Suspend (give word count load (N-1)); if N=0 go to Buffer Program confirm. Else (N
not =0) go to Buffer Program Load 2
Buffer
Load 1
Buffer Program Load 2 in Erase Suspend (data load)
Buffer
Load 2
Buffer Program Confirm in Erase Suspend when count =0; Else Buffer Program Load 2 in Erase Suspend (note:
Buffer Program will fail at this point if any block address is different from the first address)
Confirm
Ready (error)
Buffer Program
Busy in Erase
Suspend
Ready (error)
Busy
Buffer Program Busy in Erase Suspend
Buffer
Program
Suspend in
Erase
Suspend
Buffer Program Busy in Erase
Suspend
Suspend
Buffer Program Suspend in Erase Suspend
Buffer Program
Busy in Erase
Suspend
Buffer Program Suspend in Erase Suspend
Lock/CR Setup
in Erase Suspend
Erase Suspend (Lock Error)
Erase Suspend
Erase Suspend (Lock Error)
Buffer
EFP
Setup
Ready (error)
BEFP Busy
Ready (error)
Busy
BEFP Busy (6)
Current CI State
Command Input
Read
Array(2)
(FFh)
Program
Setup
(3,4)
(10/40h)
Buffer
Program
(3,4)
(E8h)
Block
Erase,
Setup
(3,4)
(20h)
BEFP
Setup
(80h)
Erase Confirm
P/E Resume,
Block Unlock
confirm,
BEFP Confirm
(3,4)
(D0h)
Buffer
Program,
Program/
Erase
Suspend
(B0h)
Read
Status
Register
(70h)
Clear
status
Register
(5)
(50h)
Read
Electronic
Signature,
Read CFI
Query
(90h, 98h)
相關(guān)PDF資料
PDF描述
M30L0T8000B0ZAQE 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
M31002AMLJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, LVDS OUTPUT
M31016AUMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
M31002AGMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
M31002BMMJ1000.000000MHZ VCXO, CLOCK, 1000 MHz, CMOS OUTPUT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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