參數(shù)資料
型號(hào)： S29NS032JPLBFW002
廠(chǎng)商： Spansion Inc.
英文描述： 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述： 110納米CMOS 1.8伏只有同時(shí)讀/寫(xiě)，突發(fā)模式閃存
文件頁(yè)數(shù)： 83/85頁(yè)
文件大?。?/td> 799K
代理商： S29NS032JPLBFW002
March 22, 2006 S29NS-J_00_A10
S29NS-J
79
D a t a S h e e t
Revision A6 (April 7, 2004)
Ordering I nformation
Removed Pb-Free Compliant options from 32 Megabit and 16 Megabit combinations for both 66
MHz and 54 MHz.
Global
Corrected figure references.
AC Characteristics
Modified the t
READY
timing in Figure 14 in Hardware Reset (RESET#).
Erase and Programming Performance
Added density and typical values to Accelerated Chip Erase Time parameter.
Data Retention
Remove section.
Revision A7 (August 4, 2004)
Global Change
Changed all instances of “FASL” to “Spansion”.
Added Colophon text.
Sector Erase Command Sequence
Replaced “50 μs” with “t
SEA
(sector erase accept) '.
Accelerated Sector Erase Groups, S29NS032J
Replaced “SA0–SA7” with “SA0–SA3”.
Replaced “
SA8–SA15” with “SA4–SA7”.
Replaced “
SA16–SA23” with “SA8–SA11”.
Replaced “SA24–SA31” with “SA56–SA59”.
Deleted “SA40–SA47”.
Deleted “SA48–SA55”.
Deleted “SA48–SA55”.
Replaced “
SA56–SA62” with “SA60–SA62”.
Accelerated Sector Erase Groups, S29NS016J
Replaced “
SA0–SA7” with “SA0–SA1”.
Replaced “
SA8–SA15” with
Replaced “SA16–SA23” with
Replaced “SA24–SA30” with
Added the following: SA8-SA9; SA10-SA11; SA12-SA13; SA14-SA15; SA16-SA17; SA18-SA19;
SA20-SA21; SA22-SA23; SA24-SA25; SA26-SA27; SA28-SA29; SA30
Erase Suspend/ Erase Resume Commands
Replaced “50 μs” with “t
SEA
”.
Replaced “35 μs” with “t
ESL
(erase suspend latency)”.
DQ7: Data# Polling
Replaced “1 μs” with “t
PSP
”.
Replaced “100 μs” with “t
ASP
(all sectors protected toggle time)”.
相關(guān)PDF資料
PDF描述
S29NS032JPLBFW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW000 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW002 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS032JPLBFW003 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW000 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW002 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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