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參數(shù)資料
| 型號： | S29NS032JPLBFW002 |
| 廠商： | Spansion Inc. |
| 英文描述： | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| 中文描述： | 110納米CMOS 1.8伏只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 6/85頁 |
| 文件大?。?/td> | 799K |
| 代理商： | S29NS032JPLBFW002 |
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2
S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
General Description
The S29NS128J, S29NS064J, S29NS032J and S29NS016J are 128 Mbit, 64 Mbit, 32 Mbit and 16
Mbit 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash memory devices, organized as
8,388,608, 4,194,304, 2,097,152 and 1,048,576. words of 16 bits each. These devices use a sin-
gle V
CC
of 1.7 to 1.95 V to read, program, and erase the memory array. A 12.0-volt A
cc
may be
used for faster program performance if desired. These devices can also be programmed in stan-
dard EPROM programmers.
The devices are offered at the following speeds:
The devices operate within the temperature range of –25
°
C to + 85
°
C, and are offered Very Thin
FBGA packages.
Simultaneous Read/Write Operations with Zero Latency
The Simultaneous Read/Write architecture divides the memory space into four banks. The device
allows a host system to program or erase in one bank, then immediately and simultaneously read
from another bank, with zero latency. This releases the system from waiting for the completion
of program or erase operations.
The devices are structured as shown in the following tables:
Clock
Speed
Burst Access (ns)
Synch. Initial Access
(ns)
Asynchronous Initial
Access (ns)
Output
Loading
66 MHz
11
71
65
30 pF
54 MHz
13.5
87.5
70
S29NS128J
Bank A Sectors
Bank B, C & D Sectors
Quantity
Size
Quantity
Size
4
8 Kwords
64
32 Kwords
63
32 Kwords
32 Mbits total
96
Mbits total
S29NS064J
Bank A Sectors
Bank B, C & D Sectors
Quantity
Size
Quantity
Size
4
8 Kwords
32
32 Kwords
31
32 Kwords
16 Mbits total
48
Mbits total
相關PDF資料 |
PDF描述 |
|---|---|
| S29NS032JPLBFW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW000 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW002 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS032JPLBFW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
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